Electron emission from plasmonically induced Floquet bands at metal surfaces

Branko Gumhalter,Dino Novko,Hrvoje Petek
DOI: https://doi.org/10.1103/PhysRevB.106.035422
2022-05-02
Abstract:We explore the possibility of existence of plasmonically generated electronic Floquet bands at metal surfaces by studying the gauge transformed electron-surface plasmon interaction in the prepumped plasmonic coherent state environment. These bands may promote non-Einsteinian electron emission from metal surfaces exposed to primary interactions with strong electromagnetic fields. Resonant behaviour and scaling of emission yield with the parent electronic structure and plasmonic state parameters are estimated for Ag(111) surface. Relative yield intensities from non-Einsteinian emission channels in photoelectron spectra offer the means to calibrate the mediating plasmonic fields and therefrom ensuing surface Floquet bands.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: on the metal surface, through the interaction between the strong electromagnetic field and the electron system, whether electron Floquet bands induced by surface plasmons can be generated, and thereby promote non - Einsteinian electron emission. Specifically, the author explored whether the electron - plasmon interaction on the metal surface can form new electron states under the action of a strong external electromagnetic field, and lead to an electron emission mechanism different from the traditional Einstein photoelectric effect. ### Main research content 1. **Theoretical background**: - The author reviewed previous studies on the nonlinear electron response of metals under strong electromagnetic fields, especially the non - Einsteinian electron emission channels observed through multiphoton photoemission (2PP) experiments. - The characteristic of these channels is that the energy of the emitted electrons \(\epsilon_f\) is no longer simply linearly related to the absorbed photon energy \(n\hbar\omega_x\), but is related to the plasmon energy \(\sim 2\hbar\omega_p\). 2. **Model description**: - The author introduced a gauge transformation to convert the standard electron - plasmon interaction Hamiltonian \(H\) into the velocity gauge form, in order to better describe the influence of the strong electromagnetic field on the electron motion. - In this new gauge, the electron wave function can be approximately represented by a method similar to the Volkov Ansatz, thereby revealing the plasmon - induced Floquet sidebands. 3. **Electron emission mechanism**: - The author derived in detail the transition rate of electron emission from the excited - state surface Floquet bands and estimated the semi - quantitative results of plasmon - assisted electron emission on the Ag(111) surface. - The research shows that the non - Einsteinian electron emission signal can appear at integer multiples of the photon energy, provided that the final state \(\vert\phi_{K,f}\rangle\) is an "inverse LEED" outgoing - wave solution. 4. **Experimental verification**: - The author proposed a method to calibrate the plasmon - mediated field and the resulting surface Floquet bands by analyzing the relative emission intensity. - Experimental verification can be carried out by detecting the existence of non - Einsteinian electron emission signals under specific conditions. ### Conclusion The paper proposes a new mechanism, that is, through the plasmon - induced surface Floquet bands, non - Einsteinian electron emission can be achieved. This mechanism not only provides a new perspective for understanding the interaction between strong electromagnetic fields and electrons on the metal surface, but also makes it possible to detect and calibrate plasmon fields experimentally. ### Formula summary - Floquet state wave function: \[ \psi_F^{K,s}(\rho, z, t)=\exp\left[i\left(K\rho-\frac{\hbar K^2}{2m^*\hbar}t-\frac{E_s}{\hbar}t+\frac{U_p}{\hbar}t\right)\right]\times\sum_{n = -\infty}^{\infty}e^{-in\omega_s t}i^nJ_n\left(iZ_s\frac{\partial}{\partial z},\beta_s\right)u_s(z) \] - Transition rate formula: \[ W_{K,f\leftarrow s}^{(n)}=\frac{2\pi}{\hbar}\left(\frac{\hbar^2K^2}{2(m^*-m)mm^*}+E_{kf}-E_s\right)^2\left|\langle\phi_{K,f}\vert J_n\left(iZ_s\frac{\partial}{\partial z},\right)\right|