Strong influence of the Pd-Si ratio on the valence transition in EuPd$_2$Si$_2$ single crystals

Kristin Kliemt,Marius Peters,Isabel Reiser,Michelle Ocker,Franziska Walther,Doan-My Tran,Eunhyung Cho,Michael Merz,Amir A. Haghighirad,Dominik C. Hezel,Franz Ritter,Cornelius Krellner
DOI: https://doi.org/10.1021/acs.cgd.2c00475
2022-03-10
Abstract:Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well as the Czochralski technique. The chemical and structural characterization of an extracted single crystalline Czochralski-grown specimen yielded a slight variation of the Si-Pd ratio along the growth direction and confirms the existence of a finite Eu(Pd$_{1-m}$Si$_m$)$_2$ homogeneity range. The thorough physical characterization carried out on the same crystal showed that this tiny variation in the composition strongly affects the temperature T$_v$ at which the valence transition occurs. These experiments demonstrate a strong coupling between structural and physical properties in the prototypical valence-fluctuating system EuPd$_2$Si$_2$ and explain the different reported values of T$_v$.
Strongly Correlated Electrons
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