Abstract:Microwave loss in niobium metallic structures used for superconducting quantum circuits is limited by a native surface oxide layer formed over a timescale of minutes when exposed to an ambient environment. In this work, we show that nitrogen plasma treatment forms a niobium nitride layer at the metal-air interface which prevents such oxidation. X-ray photoelectron spectroscopy confirms the doping of nitrogen more than 5 nm into the surface and a suppressed oxygen presence. This passivation remains stable after aging for 15 days in an ambient environment. Cryogenic microwave characterization shows an average filling factor adjusted two-level-system loss tangent $\rm{F\delta_{TLS}}$ of $(2.9\pm0.5)\cdot10^{-7}$ for resonators with 3 $\rm{\mu}$m center strip and $(1.0\pm0.3)\cdot10^{-7}$ for 20 $\rm{\mu}$m center strip, exceeding the performance of unpassivated samples by a factor of four.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to reduce the microwave loss of niobium (Nb) metal structures in superconducting quantum circuits through nitrogen plasma passivation technology. Specifically, the paper focuses on how to suppress the formation of the niobium surface oxide layer, because this oxide layer can lead to two - level system (TLS) defects, thereby causing high microwave losses. By introducing nitrogen plasma treatment to form a niobium nitride layer at the metal - air interface, the formation of the oxide layer can be effectively prevented, thereby reducing microwave losses and increasing the coherence time of superconducting qubits. The key points mentioned in the paper include: - **Problem background**: Niobium metal structures will form an intrinsic oxide layer within a few minutes when exposed to environmental conditions, and this oxide layer will cause microwave losses and limit the performance of superconducting quantum circuits. - **Solution**: Through nitrogen plasma treatment, a layer of niobium nitride (NbN) is formed on the niobium surface, and this thin film can effectively prevent the regeneration of the oxide layer and maintain the high - quality factor of the material. - **Experimental verification**: X - ray photoelectron spectroscopy (XPS) was used to confirm the successful doping of nitrogen atoms on the niobium surface, and the oxygen content was significantly reduced. In addition, after 15 days of environmental aging tests, the nitride layer was still stable, indicating that this passivation method has good long - term stability. - **Performance evaluation**: Through low - temperature microwave measurements, it was confirmed that the microwave losses of nitrogen - plasma - passivated niobium resonators in two different geometric structures were significantly reduced. The average filling - factor - adjusted two - level - system loss tangent values were $(2.9 \pm 0.5)\times 10^{-7}$ and $(1.0 \pm 0.3)\times 10^{-7}$ respectively, which were better than the performance of the un - passivated samples. In summary, this paper proposes an effective nitrogen plasma passivation method, which can significantly improve the microwave performance of niobium - based superconducting quantum circuits and provides a new technical means for the development of high - performance quantum processors.

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