The Onset and End of the Gunn Effect in Extrinsic Semiconductors

L. Bonilla,F. Higuera
DOI: https://doi.org/10.1137/S0036139991199456
IF: 1.9
1995-12-01
SIAM Journal on Applied Mathematics
Abstract:A Hopf bifurcation analysis of the spontaneous current oscillation in direct current (DC) voltage-biased extrinsic semiconductors is given for the classical model of the Gunn effect in n-GaAs. For semiconductor lengths L larger than a certain minimal value, the steady state is linearly unstable for voltages in an interval $( \phi _\alpha ,\phi _\omega )$. As L increases, the branch of time-periodic solutions bifurcating at simple eigenvalues when $\phi = \phi _\alpha $ turns from subcritical to supercritical and then back to subcritical again. For very long semiconductors a quasi continuum of oscillatory modes bifurcates from the steady state at the onset of the instability. The bifurcating branch is then described by a scalar reaction-diffusion equation with cubic nonlinearity subject to antiperiodic boundary conditions on a subinterval of $[ 0,L ]$. For the electron velocity curve we have considered, the bifurcation is subcritical, which may agree with experimental observations in n-GaAs. An extension o...
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