108-GHz GaInAs/InP p-i-n photodiodes with integrated bias tees and matched resistors

Yih-Guei Wey,K. Giboney,J. Bowers,M. Rodwell,P. Silvestre,P. Thiagarajan,G. Y. Robinson
DOI: https://doi.org/10.1109/68.250053
IF: 2.6
1993-11-01
IEEE Photonics Technology Letters
Abstract:Connections to bulk bias tees and various mismatched loads degrade the usable frequency response of high-speed photodetectors. Monolithic integration of passive components to enhance the realizable performance of high-bandwidth, long-wavelength photodiodes is demonstrated. Circuits having bias tees and matched resistors integrated with 7- mu m*7- mu m photodiodes show usable electrical bandwidths exceeding 100 GHz.<<ETX>>
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