Abstract:Non-Hermitian topological photonics possesses abundant and complicated physical effects and phenomena, which have great potential and important applications in integrated photonic devices. However, the light localization properties and approaches for active control of topological states have not been revealed sufficiently so far. Here we prove the phase transition exists in the interface between gain and loss domains of a parity-time symmetric C6v topological photonic crystal from its projected bands. The non-Hermitian topological cavity formed by closed gain-loss boundary has unique resonant responses and better light localization properties compared with the Hermitian counterpart. The cavity modes are composed of edge states and corner states whose eigenfrequencies change with gain-loss quantity in the same way as the projected band. The maximum value of the quality factor of non-Hermitian topological cavity reaches 104, which is enlarged by one order compared with the Hermitian counterpart. At the same time, the mode volume of non-Hermitian topological cavity is reduced by over tenfold compared with the Hermitian counterpart. The non-Hermitian induced edge states and corner states may open a new route for the design of the topologically protected and reconfigurable localized resonances. This work provides a new degree of freedom to control different topological states and offers a scheme for solving the contradiction between the flexibility of devices and the robustness of topological properties.

Optimization and robustness of topological corner state in second-order topological photonic crystal

Optimization and Robustness of the Topological Corner State in Second-Order Topological Photonic Crystals.

Tunable Topological Photonic Crystal Waveguides

Coupled cavity-waveguide based on topological corner state and edge state

Cavity Quantum Electrodynamics with Second‐Order Topological Corner State

Topology Optimization of Quantum Spin Hall Effect-Based Second-Order Phononic Topological Insulator

Second-order Topological Phases in C 4v -Symmetric Photonic Crystals Beyond the Two-Dimensional Su-Schrieffer–Heeger Model

Realization of hierarchy topological transition and high-Q response corner state in second-order topological photonic crystal

Photonic crystal nanocavity based on a topological corner state

Creating Anisotropic Topological Phases Within Inversely Designed Photonic Crystals

Tunable Terahertz Topological Edge and Corner States in Designer Surface Plasmon Crystals.

Design of pure and hybrid corner states in all-dielectric second-order photonic topological insulators

Second Harmonic Generation Enhancement and Directional Emission from Topological Corner State Based on the Quantum Spin Hall Effect

Tunable Topological Edge and Corner States in an All-Dielectric Photonic Crystal.

Inversely Designed Second-Order Photonic Topological Insulator with Multiband Corner States

Dual-Polarization Second-Order Photonic Topological Insulators

Combining Sensitivity and Robustness: EIT-like Characteristic in a 2D Topological Photonic Crystal

Theory and Application of Edge States in Topological Photonic Crystals

Non-Hermitian High-Quality-factor Topological Photonic Crystal Cavity

Topological Corner State Localized Bound States in Continuum in Photonic Crystals

Edge and corner states in non-Hermitian second-order topological photonic crystals