Mechanism of parametric pumping of magnetization precession in a nanomagnet. Parametric mechanism of current-induced magnetization reversal

Vadym Zayets
DOI: https://doi.org/10.48550/arXiv.2104.13008
2021-04-27
Abstract:A mechanism of current-induced magnetization reversal based on the parametric resonance is described. The source of the magnetization reversal is a current-induced magnetic field, which is applied perpendicularly to the easy axis of magnetic anisotropy of a ferromagnetic nanomagnet. The current-induced magnetic field was measured in a FeCoB nanomagnet to be 60 Gauss at a current density of 65 mA/um2. Two mechanisms of the magnetization reversal are described and calculated. The first mechanism is the reversal by a RF electrical current, which modulated at a frequency close to the precession frequency of the nanomagnet. The second mechanism is the reversal by a DC electrical current, in which the magneto-resistance and the current dependency of the induced magnetic field create a positive feedback loop, which amplifies a random tiny thermal fluctuation into a large magnetization precession leading to the magnetization reversal. The combination of the proposed mechanism with conventional magnetization-reversal mechanisms such as the Spin Torque and the Spin-Orbit Torque can improve the performance of a Magnetic Random Access Memory.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: how to achieve efficient magnetization reversal through the current - induced magnetization reversal mechanism, especially by using parametric resonance in nanomagnets. Specifically, the authors propose two different current - induced magnetization reversal mechanisms and explore their potential applications in magnetic random - access memory (MRAM). ### 1. Research Background Magnetization reversal is the basis of the MRAM writing mechanism. Traditional magnetization reversal methods rely on spin injection, such as Spin Torque (ST) and Spin - Orbit Torque (SOT). However, the effectiveness of these methods highly depends on the quality of the material interface, the type of material, and the roughness and sharpness of the interface, which limits the application range of MRAM. ### 2. Proposed New Mechanisms To overcome the above problems, this paper proposes a new magnetization reversal mechanism based on parametric resonance. This mechanism does not rely on spin injection, so it can be applied to a wider range of materials and has lower requirements for interface quality. The core idea of this new mechanism is to induce parametric resonance of magnetization precession through the current - induced magnetic field ($H_{CI}$) under specific conditions, thereby achieving magnetization reversal. ### 3. Specific Research Contents #### 3.1 Magnetization Reversal Induced by Radio - Frequency Current (RF Current) When the frequency of the radio - frequency current is close to the magnetization precession frequency of the nanomagnet, the current - induced magnetic field ($H_{CI}$) will resonate with the magnetization precession. This resonance effect will gradually amplify the magnetization precession angle and eventually lead to magnetization reversal. The formula is described as follows: \[ \frac{\partial m}{\partial t}=-\gamma m\times H_{total}+\lambda m\times(m\times H_{total})+\gamma m\times H_{CI}(t) \] where: - $m$ is a unit vector, representing the magnetization direction. - $H_{total}$ is the total magnetic field, which is equal to the vector sum of the internal magnetic field $H_{int}$ and the external magnetic field $H_{ext}$. - $H_{CI}(t)$ is the time - varying current - induced magnetic field. - $\gamma$ is the gyromagnetic ratio of electrons. - $\lambda$ is the precession damping coefficient. #### 3.2 Magnetization Reversal Induced by Direct - Current (DC Current) For direct - current, the magnetization reversal mechanism involves a positive - feedback loop. In this loop, magnetization precession will modulate the current, and the current will modulate the magnetic field, which will further enhance the magnetization precession. This process can amplify small thermal fluctuations into large magnetization precession and eventually lead to magnetization reversal. ### 4. Experimental Verification The article also details the method for measuring the current - induced magnetic field ($H_{CI}$) in FeCoB nanomagnets and presents the experimental results. Experiments show that at a current density of 65 mA/μm², the current - induced magnetic field is approximately 60 Gauss. Although this magnetic field strength is relatively small, it is sufficient to trigger magnetization reversal under parametric resonance conditions. ### Conclusion By introducing the magnetization reversal mechanism based on parametric resonance, this research provides a new idea for the design of MRAM. This method not only broadens the application range of MRAM but also improves its performance and reliability.