Abstract:Topology, a mathematical concept, has recently become a popular and truly transdisciplinary topic encompassing condensed matter physics, solid state chemistry, and materials science. Since there is a direct connection between real space, namely atoms, valence electrons, bonds and orbitals, and reciprocal space, namely bands and Fermi surfaces, via symmetry and topology, classifying topological materials within a single-particle picture is possible. Currently, most materials are classified as trivial insulators, semimetals and metals, or as topological insulators, Dirac and Weyl nodal-line semimetals, and topological metals. The key ingredients for topology are: certain symmetries, the inert pair effect of the outer electrons leading to inversion of the conduction and valence bands, and spin-orbit coupling. This review presents the topological concepts related to solids from the viewpoint of a solid-state chemist, summarizes techniques for growing single crystals, and describes basic physical property measurement techniques to characterize topological materials beyond their structure and provide examples of such materials. Finally, a brief outlook on the impact of topology in other areas of chemistry is provided at the end of the article.

What problem does this paper attempt to address?

This paper attempts to explore the classification, growth techniques and basic physical property measurement techniques of topological quantum materials from a chemical perspective. Specifically, the paper mainly addresses the following aspects: 1. **Classification of topological materials**: The paper introduces how to classify materials through single - particle images, especially classifying materials into trivial insulators, semimetals, metals, as well as topological insulators, Dirac semimetals, Weyl semimetals and topological metals. These classifications are based on factors such as the energy - band structure, Fermi surface and symmetry of the materials. 2. **Single - crystal growth techniques**: The paper summarizes a variety of single - crystal growth techniques, such as the metal - flux method, chemical vapor transport method, Bridgman method, Czochralski method and optical floating - zone method. These techniques are crucial for preparing high - quality single - crystal materials, so that the topological properties of the materials can be studied more accurately. 3. **Basic physical property measurement techniques**: The paper describes the basic physical property measurement techniques used to characterize topological materials, including electrical transport properties (such as resistivity, electron hydrodynamics, Hall effect and its quantization, anomalous Hall effect), Berry phase and curvature, thermal transport properties (such as thermoelectric effect, Seebeck effect, Nernst effect and its anomalies), etc. 4. **The relationship between topological concepts and solids**: The paper introduces topological concepts from the perspective of solid - state chemists and explains some key factors in topological materials, such as certain symmetries, the conduction - band and valence - band inversion caused by the inert - pair effect of valence electrons, and spin - orbit coupling. 5. **Application prospects of topological materials**: The paper discusses the potential applications of topological materials in other chemical fields, such as catalysis and solar cells, and looks forward to future research directions. Through the exploration of these issues, the paper aims to provide researchers with a comprehensive perspective to understand the properties and application potential of topological quantum materials.

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