Topological Interface Propagation Characteristics of Valley-Polarized Three-Dimensional Elastic Phononic Crystals Induced by Lattice Defects
Jie Zhang,Baizhan Xia
DOI: https://doi.org/10.1360/tb-2021-0568
2021-01-01
Chinese Science Bulletin (Chinese Version)
Abstract:Lattice defects (including disclinations and dislocations) widely exist in various materials, showing excellent physical and mechanical properties. In classical wave systems, lattice defect states were first applied to the two-dimensional optical system. The valley-polarized topological phase evolution induced by lattice deformation results in the formation of a topological interface equivalent to the domain wall, which is distinct from the general bulk-edge correspondence principle. It is capable of realizing valley-polarized topological interface states. However, until now, the majority of the research on topological states induced by lattice defects has concentrated on two-dimensional classical wave systems, and more research on three-dimensional wave systems is needed. Specifically, we present the design of a three-dimensional elastic phononic crystal in this paper. When the radii of the sublattices A and B are the same (R-a=R-b=8.45 mm), a two-fold nodal line along the K-H direction is formed. However, when the sublattices A and B have radii of 7.67 and 9.23 mm, respectively, the reflection-symmetry of the unit cell is broken, and the two-fold nodal line along the K-H direction is lifted, resulting in the formation of a complete band gap, which is accompanied by the valley-polarization. When the lattice disclination is introduced into the three-dimensional elastic phononic crystal with valley-polarization, the numerical results of band structures and eigenfrequencies show that the topologically protected interface state will be generated within the band gap. On the contrary, the hexagonal three-dimensional elastic phononic crystal without lattice disclinations has no interface state. At the same time. the pentagonal three-dimensional elastic phononic crystal with reflection-symmetry has only bulk modes near the degenerate line along the K-H direction. The generation of the topological interface of the pentagonal three-dimensional elastic phononic is due to the opposite topological phases of the unit cell crossing the interface. Following that, we investigate the topological interface transmission properties of three-dimensional elastic phononic crystals induced by lattice defects. It is discovered that elastic wave energy can be transported steadily along an interface, regardless of whether the interface is a linear interface or a curve interface. Thus, the valley-polarized interface states induced by lattice disclinations exhibit an excellent immunity to the scattering and back-reflection of elastic waves, as demonstrated by this work. For valley-polarized interface states induced by lattice dislocations, even though the structure is severely deformed everywhere, elastic wave energy still efficiently propagates along the interface, and elastic wave energy diminishes exponentially away from the topological interface. On the contrary, in the three-dimensional elastic phononic crystal with a trivial waveguide, the elastic wave energy is only concentrated at the point of excitation and cannot be transported continuously along the interface. This demonstrates that the topological interface of valley-polarized three-dimensional elastic phononic crystals induced by lattice defects has excellent transmission efficiency. The realization of valley-polarized topological interface states induced by lattice defects breaks through the limitation of classical wave systems in a single two-dimensional plane. And it realizes the robust transmission of elastic wave energy along the three-dimensional topological interface. The three-dimensional elastic topological phononic crystal proposed in this research is periodic along the vertical direction, which allows it to operate on multiple working planes. Therefore, the functional devices built on the basis of three-dimensional stacking structures can be suitable for multi-dimensional working conditions, which provide an excellent technological platform for the design of three-dimensional complex topological waveguide devices.