Mobility Parameter Tuning for Device Simulation

T. Grasser,K. Tsuneno,S. Selberherr,H. Masuda
Abstract:We present our results of tuning mobil­ ity model parameters with an· automated calibration framework. Observing a state­ of-the-art 0.25 j.lm CMOS process, sev­ eral measurements for different gate lengths (0.25-4.0 j.lm) were made. To eliminate the statistical variations typical to sub-micron devices, measurements for several chips on the the same wafer were made to chose an average sample. Carrying out simulations with the resulting parameter set, an error smaller than 2.4% for both the long-channel and the short-channel device can be ob­ served.
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