Criteria for realizing room temperature electrical transport applications of topological materials

Matthew Brahlek

DOI: https://doi.org/10.1002/adma.202005698

2020-11-04

Abstract:The unusual electronic states found in topological materials can enable a new generation of devices and technologies, yet a long-standing challenge has been finding materials without deleterious parallel bulk conduction. This can arise either from defects or thermally activated carriers. Here, I clarify the criteria that materials need to meet to realize transport properties dominated by the topological states, a necessity for a topological device. This is demonstrated for 3-dimensional topological insulators, 3D Dirac materials, and 1D quantum anomalous Hall insulators, though this can be applied to similar systems. The key parameters are electronic band gap, dielectric constant, and carrier effective mass, which dictate under what circumstances (defect density, temperature, etc.) the unwanted bulk state will conduct in parallel to the topological states. As these are fundamentally determined by the basic atomic properties, simple chemical arguments can be used to navigate the phase space to ultimately find improved materials. This will enable rapid identification of new systems with improved properties, which is crucial to design new materials systems and push into a new generation of topological technologies.

Materials Science,Other Condensed Matter

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to find the conditions that can realize the electrical transport applications of topological materials at room temperature. Specifically, the author focuses on how to achieve the transport properties dominated by the topological state without being affected by parallel bulk conduction (i.e., the conduction in non - topological states caused by defects or thermally activated carriers). This is crucial for the development of a new generation of topological devices and technologies.

### Background and Objectives of the Paper

1. **Unique Properties of Topological Materials**
- Topological materials have unique electronic states, which can be used to develop new devices and technologies.
- However, a long - standing challenge is that these materials usually have parallel bulk conduction, which will interfere with the transport properties of the topological state.

2. **Sources of Parallel Bulk Conduction**
- Parallel bulk conduction may originate from defects or thermally activated carriers.
- This parallel conduction will seriously interfere with the transport of the topological state, making practical applications difficult.

3. **Research Objectives**
- The author aims to clarify what conditions the materials need to meet in order to be dominated by the topological state during the transport process.
- These conditions are applicable to systems such as three - dimensional topological insulators, three - dimensional Dirac materials and one - dimensional quantum anomalous Hall insulators.

### Key Parameters and Conditions

1. **Electron Band Gap**
- The width of the band gap determines the stability of the material at high temperatures. A wider band gap can reduce the number of thermally activated carriers.

2. **Dielectric Constant**
- The dielectric constant affects the sensitivity of the material to defects. A lower dielectric constant can improve the stability of the material at a high defect density.

3. **Effective Mass of Carriers**
- The effective mass of carriers determines the conductive behavior of the material at high temperatures. A smaller effective mass helps to reduce the number of thermally activated carriers.

### Formulas and Calculations

1. **Mott Criterion**
- It describes the critical defect density \( N_D \) at which the material changes from an insulator to a metal:
\[
N_D\approx\left(\frac{0.26}{a}\right)^3
\]
where \( a = \frac{\epsilon(m_e / m^*)a_B}{}\), \( \epsilon \) is the dielectric constant, \( m^* \) is the effective mass, and \( a_B \) is the Bohr radius of free space.

2. **Thermally Activated Carrier Density**
- The thermally activated carrier density \( N(T) \) can be calculated by the following integral:
\[
N(T)=\int D(E)f(E, T)dE
\]
where \( D(E) \) is the density of states and \( f(E, T) \) is the Fermi function:
\[
f(E, T)=\frac{1}{1 + e^{E/(k_BT)}}
\]

3. **Conductivity Ratio**
- By calculating the conductivity ratio \( P_{DS - BS} \) between the topological state and the bulk state, the contribution of the topological state to the total conductivity can be evaluated:
\[
P_{DS - BS}(\%)=\frac{G_{DS}}{G_{DS}+G_{BS}}\times100\%
\]
where \( G_{DS} \) and \( G_{BS} \) are the conductivities of the topological state and the bulk state, respectively.

### Conclusions

- In order to achieve the transport dominated by the topological state at room temperature, materials with a larger band gap, a smaller dielectric constant and a smaller effective mass of carriers need to be found.
- Through theoretical calculations and analyses, the author provides the parameter ranges for guiding the design of new topological materials, which provides an important reference for future research and applications.