Abstract:Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS 2 and MoSe 2 bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS 2 (MoSe 2 ) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS 2 (MoSe 2 ) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS 2 flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.

Simultaneous Generation of Direct- and Indirect-Gap Photoluminescence in Multilayer MoS2 Bubbles

Simultaneous generation of direct- and indirect-gap photoluminescence in multilayer MoS 2 bubbles

Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2

Analysis of Photoluminescence Behavior of High-Quality Single-Layer MoS2

Direct Band Gap in Multilayer Transition Metal Dichalcogenide Nanoscrolls with Enhanced Photoluminescence

Gap Plasmon-Enhanced Photoluminescence of Monolayer MoS 2 in Hybrid Nanostructure

Emerging Photoluminescence in Monolayer MoS 2

Direct Bandgap Engineering with Local Biaxial Strain in Few-Layer MoS 2 Bubbles

Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

Emerging photoluminescence in monolayer MoS2.

A natural indirect-to-direct band gap transition in artificially fabricated MoS2 and MoSe2 flowers

Photoluminescence Enhancement by Stacking Bi-Layer MoS2 Without Interlayer Coupling

Electric field induced strong enhancement of electroluminescence in multi-Layer MoS2

Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence.

MoS2 and Perylene Derivative Based Type‐II Heterostructure: Bandgap Engineering and Giant Photoluminescence Enhancement

Tuning Excitonic Properties of Monolayer MoS2 with Microsphere Cavity by High-Throughput Chemical Vapor Deposition Method.

Strong photoluminescence enhancement in indirect bandgap MoSe$_2$ nanophotonic resonator

Resonance Photoluminescence Enhancement of Monolayer MoS2 via a Plasmonic Nanowire Dimer Optical Antenna

Nanoscale optical imaging of multi-junction MoS2-WS2 lateral heterostructure

Prominently enhanced luminescence from a continuous monolayer of transition metal dichalcogenide on all-dielectric metasurfaces