Abstract:High-quality transparent conductive materials are beneficial to improve the charge transfer and light transmittance and reduce the interface defects as well as the production cost of optoelectronic devices. A high threshold thickness of metal layer in oxide/metal/oxide (OMO) compound thin films leads to strong reflectance, especially in the near-infrared region, limiting the broad-spectrum device applications. Here, we propose a novel Zn doping strategy using the low-cost single-target sputtering technology to achieve the growth of Ag-Zn thin films (i.e., Zn-doped Ag) and introduce a trace amount of O<sub>2</sub> to further obtain ultrathin Ag-Zn(O) films (thin-film thickness <i>d</i> ≤ 5 nm), which greatly improves the broad-spectrum characteristics of OMO films. Heterogeneous metal and gas doping technology effectively promotes the formation of two-dimensional continuous film growth. By combining the ultrathin Ag-Zn(O) layer with the MGZO (i.e., Mg- and Ga co-doped ZnO) oxide film grown by reactive plasma deposition, a typical broad-spectrum MGZO/Ag-Zn(O)/MGZO (50/5/50 nm)-OMO compound thin film exhibits an average transmittance of 91.6% in the wavelength range of 400-1200 nm and low sheet resistance. The broad-spectrum organic solar cells based on MGZO/Ag-Zn(O)/MGZO electrodes present a high power conversion efficiency of 15.35%, superior to those devices based on single-layer oxide electrodes. The distinguished performances are attributed to the ultrathin Ag-Zn(O) films in OMO, paving the way for applications in broad-spectrum optoelectronic and flexible electronic devices.

High transparent conductive Mg, Al, and Ga co-doped ZnO multilayer thin films with Cu interlayer: fabrication, structure, and characteristics

Fabrication and Properties of Transparent Conductive AZO/Cu Bilayer Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Microstructure, surface morphology and optical properties of Na x Cu y Zn 1− x − y O thin films

Improvement of Transparent Conductive Properties of GZO/Cu/GZO Tri-Layer Films by Introducing H2 into Sputtering Atmosphere

Transparent conductive and near-infrared reflective Cu-based Al-doped ZnO multilayer films grown by magnetron sputtering at room temperature

Transparent conductive Ga-doped ZnO/Cu multilayers prepared on polymer substrates at room temperature

Single Crystalline Transparent Conducting F, Al, and Ga Co-Doped ZnO Thin Films with High Photoelectrical Performance

Effect of Film Thickness on Properties of Al-Doped Zno Film As Transparent Conducting Electrodes in Oleds

Transparent conductive Al-doped ZnO/Cu bilayer films grown on polymer substrates at room temperature

Conductive Ga doped ZnO/Cu/Ga doped ZnO thin films prepared by magnetron sputtering at room temperature for flexible electronics

Investigation of the optical and electrical properties of ZnO/Cu/ZnO multilayers grown by atomic layer deposition

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Study on Al doped ZnO transparent conducting films

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Room-Temperature Growth and Properties of Transparent Conductive GZO/Cu/GZO Multilayer Thin Films

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Ga-concentration-dependent optical and electrical properties of Ga-doped ZnO thin films prepared by low-temperature atomic layer deposition

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Influence of buffer layer on optoelectronic properties of B-Mg co-doped ZnO ultrathin film for high-performance transparent conductor application

Broad-Spectrum Ultrathin-Metal-Based Oxide/Metal/Oxide Transparent Conductive Films for Optoelectronic Devices