Coupling effect between hole storage and interfacial charge transfer over ultrathin CoPi modified hematite photoanode

Pengpeng Wang,Chunmei Ding,Dongfeng Li,Yimeng Cao,Zheng Li,Xiuli Wang,Jingying Shi,Can Li

DOI: https://doi.org/10.1039/d2dt00765g

IF: 4

2022-05-26

Dalton Transactions

Abstract:Understanding the functionality of modification layer in regulating charge transfer process at the semiconductor/electrolyte interface is of great significance towards rational design of photoelectrocatalytic water oxidation system. Herein, by systematically investigating and comparing the charge transfer kinetics behaviors over ferrihydrite (Fh) and cobalt phosphate (CoPi) modified hematite (Fe2O3) photoanodes, we unveiled the essential relation between photocurrent enhancement and charge transfer process. With hole-storage material Fh as reference, it was found that CoPi demonstrates high hole-storage capacity at low bias region (<1.0 V vs. RHE) due to effective release of Fermi level pinning. Afterwards, the stored holes would be timely injected into electrolyte for water oxidation, caused by the enhanced charge separation in the presence of CoPi. In contrast, the decoration of Fh can only slightly passivate surface states and promote the hole injection in high potential region. Subsequently, superior hole-storage capacity in low-potential region is recognized as the crucial factor for the photocurrent enhancement. These combined results provide new insights into the understanding in interfacial charge transfer kinetics.

chemistry, inorganic & nuclear