Two-dimensional semiconducting Cs( i )/Bi( iii ) bimetallic iodide hybrids for light detection

Mohamed Saber Lassoued,Le-Yu Bi,Zhaoxin Wu,Guijiang Zhou,Yan-Zhen Zheng

DOI: https://doi.org/10.1039/d0qm00762e

IF: 8.6834

2021-01-01

Materials Chemistry Frontiers

Abstract:Two new 2D semiconducting Cs/Bi hybrid compounds are reported here with evident photocurrent responses.

materials science, multidisciplinary,chemistry

What problem does this paper attempt to address?

Two-dimensional semiconducting Cu(I)/Sb(III) bimetallic hybrid iodides with a double perovskite structure and photocurrent response

Qian-Wen Li,Le-Yu Bi,Mohamed Saber Lassoued,Qian-Cheng Luo,Rong Yan,Xin-Kai Ding,Gao-Yang Gou,Yan-Zhen Zheng

DOI: https://doi.org/10.1039/d2nr06996b

IF: 6.7

2023-03-16

Nanoscale

Abstract:Stable lead-free hybrid halide double perovskites have sparked widespread interest as a new kind of photoelectric material. Herein, for the first time, we successfully incorporated copper(I) and antimony(III) into two two-dimensional (2D) hybrid bimetallic double perovskite iodides, namely (NH3C6H11)4CuSbI8·H2O (CuSbI-1) and (NH3C6H10NH3)2CuSbI8·0.5H2O (CuSbI-2), using cyclohexylamine and 1,4-cyclohexanediamine as organic components. The band gaps for CuSbI-1 and CuSbI-2 were determined to be 2.22(2) eV and 2.21(2) eV, respectively. Furthermore, these two layered perovskites were readily dissolved in an organic solvent (1 mL DMF can dissolve 1 g sample for each compound) and could form smooth, pinhole-free, and uniform thin films through a facile spin-coating method. Photocurrent experiments with xenon lamp irradiation revealed the obvious photoelectric responses for both 2D double perovskites. The ratio of the photocurrent to the dark current (Ilight/Idark) for CuSbI-1 and CuSbI-2 is about 23 and 10, respectively, further suggesting their potential to be applied as light harvesters or light detectors. More importantly, these 2D double perovskite iodides show high moisture and thermal stabilities, indicating their potential for optoelectronic applications.
Stable Two-Dimensional Lead Iodide Hybrid Materials for Light Detection and Broadband Photoluminescence

Mohamed Saber Lassoued,Yuan-Chao Pang,Qian-Wen Li,Xinkai Ding,Bo Jiao,Hua Dong,Guijiang Zhou,Shujiang Ding,Zhicheng Zhang,Zhaoxin Wu,Gaoyang Gou,Zongyou Yin,Ju Li,Yan-Zhen Zheng

DOI: https://doi.org/10.1039/d1qm01247a

IF: 8.6834

2022-01-01

Materials Chemistry Frontiers

Abstract:We report here two new semiconducting two-dimensional lead iodide organic–inorganic hybrid compounds with broadband emission and strong photocurrent response.
A Semiconductive Copper Iodobismuthate Hybrid: Structure, Optical Properties and Photocurrent Response.

Jun Li,Ming-Hui Liu,Hong-Yao Shen,Meng-Zhen Liu,Jin-Ting Wu,Bo Zhang

DOI: https://doi.org/10.1039/d2dt03998b

IF: 4

2023-01-01

Dalton Transactions

Abstract:Pursuits of new types of Pb-free heterometallic halides adequate for photovoltaic applications are still urgent but challenging. In this study, by using in situ-produced [(Me)2-(DABCO)]2+ (DABCO = 1,4-diazabicyclo[2.2.2]octane; Me = methyl) cations as structure-directing agents, we successfully constructed a non-perovskite copper iodobismuthate hybrid, namely [(Me)2-(DABCO)]2Cu2Bi2I12 (1), which features discrete [Cu2Bi2I12]4- anionic moieties formed by the building units of [CuI4] tetrahedra and [BiI6] octahedra. UV-Vis diffuse reflectance analyses showed that compound 1 possesses semiconductive behaviors with a narrow optical bandgap of 1.80 eV. More importantly, it exhibits excellent photoelectric switching abilities, and its photocurrent density (2.30 μA cm-2) far exceeds those of some high-performance halide-based counterparts. Different from many heterometallic analogues, noteworthily, it also has dispersive band structure and strong electronic coupling near the Fermi level, resulting in a material with small effective masses that may be responsible for the good photoelectricity. This study may offer new guidance for the design and synthesis of eco-friendly heterometallic halides with unique structures and desirable properties.
Anisotropic optoelectronic properties of lead-free Cs3Bi2I9 single-crystal photodetectors

Jingyi Liu,Wanggao Nie,Lairong Yan,Hao Hu,Guoqiang Zhang,Ping Lin,Haihua Hu,Lingbo Xu,Peng Wang,Can Cui

DOI: https://doi.org/10.1088/1361-6463/ad4a86

2024-05-15

Journal of Physics D Applied Physics

Abstract:Lead-free halide perovskites have attracted widespread research interest due to their excellent optoelectronic properties and environmental friendliness. As one of the bismuth iodide compounds, Cs3Bi2I9 perovskite has been extensively explored in the field of photovoltaic devices and radiation detectors due to their non-toxic lead-free components and excellent stability. In this work, we successfully grow large-sized Cs3Bi2I9 single crystals (SC) with (l00) and (00l) crystal exposure facets by inverse temperature crystallization method. Under 525 nm light illumination with the intensity 15 mW/cm2 and 7 V bias, the (l00) Cs3Bi2I9 SC shows 2 times higher photocurrent, 3.6 times higher responsivity, and 2.8 times higher detectivity than the (00l) Cs3Bi2I9 SC, respectively. Superior response time in the scale of millisecond is obtained in both (l00) and (00l) Cs3Bi2I9 SCs. Based on the first-principle calculation, the (l00) SC possesses a higher charge distribution density and a wider dispersion distribution than (00l) SC, suggesting that more electrons in the (l00) SC can be excited in a wider range. The tighter arrangement of Cs+ and [BiI6]− octahedra in the (l00) SC than (00l) SC leads to the anisotropic photoelectric performance in (l00) and (00l) Cs3Bi2I9 SCs. Our results provide a strategy for the oriental growth of Cs3Bi2I9 SCs and the design of anisotropic optoelectronic devices with excellent performance.

physics, applied
High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Jianghong Wu,Maoliang Wei,Jianglong Mu,Hui Ma,Chuyu Zhong,Yuting Ye,Chunlei Sun,Bo Tang,Lichun Wang,Junying Li,Xiaomin Xu,Bilu Liu,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1021/acsnano.1c04359

IF: 17.1

2021-01-01

ACS Nano

Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.
Ultrahigh-performance photodetectors based on low-dimensional Cs2AgBiBr6/CdS heterojunction

Aimin Liu,Jun Ding,Qiuhong Tan,Peizhi Yang,Yingkai Liu,Qianjin Wang

DOI: https://doi.org/10.1016/j.jcis.2024.09.245

2024-09-30

Abstract:Lead-free double perovskite Cs2AgBiBr6 has garnered increasing attention in photoelectric applications owing to its good stability and excellent photoelectric properties. However, the poor carrier transport in Cs2AgBiBr6 thin films constraints their further application in photodetection. To overcome this issue, we have developed an innovative low-dimensional Cs2AgBiBr6/CdS heterojunction photodetector with substantially improved performance. The device achieved a high responsivity of 6.66 × 103 A/W, an outstanding specific detectivity of 2.10 × 1014 Jones, and an impressive external quantum efficiency of 1.88 × 106 %. Additionally, the on/off current ratio of the heterojunction device reached an impressive 6.18 × 107. These key parameters are significantly better than those of most previously reported Cs2AgBiBr6-based photodetectors. Furthermore, scanning photocurrent mapping and band arrangement analysis were performed to elucidate the mechanism of photocurrent generation and transport in the low-dimensional Cs2AgBiBr6/CdS heterojunction photodetectors. This study highlights the outstanding performance of Cs2AgBiBr6/CdS heterojunction and provides a simple and effective strategy for developing high-performance Cs2AgBiBr6-based photodetectors.
Fast Fabrication of WS2/Bi2Se3 Heterostructures for High-Performance Photodetection

Fan Li,Jialin Li,Junsheng Zheng,Yuanbiao Tong,Huanfeng Zhu,Pan Wang,Linjun Li

DOI: https://doi.org/10.1021/acsami.2c17513

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties, which expand the possibilities for future optoelectronic, photovoltaic, and nanoelectronic applications. A portable, fast, and deterministic transfer technique is highly needed for the fabrication of heterostructures. Herein, we report a fast half wet poly(dimethylsiloxane) (PDMS) transfer process utilizing the change of adhesion energy with the help of micron-sized water droplets. Using this method, a vertical stacking of the WS2/Bi2Se3 heterostructure with a straddling band configuration is successfully assembled on a fluorophlogopite substrate. Thanks to the complementary band gaps and high efficiency of interfacial charge transfer, the photodetector based on the heterostructure exhibits a superior responsivity of 109.9 A W-1 for a visible incident light at 473 nm and 26.7 A W-1 for a 1064 nm near-infrared illumination. Such high photoresponsivity of the heterostructure demonstrates that our transfer method not only owns time efficiency but also ensures high quality of the heterointerface. Our study may open new pathways to the fast and massive fabrication of various vertical 2D heterostructures for applications in twistronics/valleytronics and other band engineering devices.
A Lead-Iodide Based Single Crystal Semiconductor: Exploring Multi-Orientation Photoconductive Behaviour Via Intervening Isopropyl Viologen Component Between The Inorganic [Pb2i6](N)(2-) Wires

Yifang Wang,Jie Zhang,Jia Huang,Haoyu Zhang,Zhiyong Fu

DOI: https://doi.org/10.1039/c8ce00153g

IF: 3.756

2018-01-01

CrystEngComm

Abstract:A lead-iodide single crystal semiconductor with multi-orientation photoconductive properties and broad spectrum absorption has been designed and constructed by a crystal engineering technique. A strong charge transfer band was formed via organic-inorganic intermolecular interactions, darkening the color of the crystal. Electron catcher viologen cations surrounding the inorganic [Pb2I6](n)(2-) chains extended the conductive orientation from along the a-axis in its perpendicular direction, presenting an interesting multi-channel conductive single crystalline system.
Two Silver Halobismuthate Hybrids Decorated by Photosensitive Metal Complexes: Syntheses, Structures, Photoelectric Properties, and Theoretical Studies

Bo Zhang,Ya-Ning Wang,Jun Li,Xiao-Chen Ren,Yan Yang,Xin-Ru Yang

DOI: https://doi.org/10.1021/acs.cgd.2c01007

IF: 4.01

2022-10-27

Crystal Growth & Design

Abstract:Guided by photosensitive metal complexes, two new organic–inorganic hybrid silver halobismuthates, namely, [Co(bipy)3]2[AgBiBr7][Bi2Br9]·H2O (bipy = 2,2′-bipyridine, 1) and [Zn(phen)3]2[Ag2Bi2I12] (phen = 1,10-phenanthroline, 2) have been solvothermally fabricated and structurally characterized. Compound 1 is a rare [Co(bipy)3]3+-templated Ag–Bi–X compound, featuring [AgBiBr7]3– and [Bi2Br9]3– as the two types of binuclear clusters. Compound 2 exhibits discrete [Ag2Bi2I12]4– anions formed by two centrosymmetric [AgBiI8] dimers via edge-sharing. UV–vis diffuse reflection analyses showed that compounds 1 and 2 have semiconductor behaviors, with the optical absorption edges of 2.40 and 2.15 eV, respectively. Moreover, they also display excellent photoelectric switching properties, which greatly outperform or are well comparable to many halide-based counterparts, especially compound 1. The Hirshfeld surface analyses, X-ray photoelectron spectroscopy characterizations, thermal stabilities, and theoretical studies (band gaps, density of states, and wave functions) are also discussed.

chemistry, multidisciplinary,materials science,crystallography
A new metal complex-templated silver iodobismuthate exhibiting photocurrent response and photocatalytic property

Bo Zhang,Jun Li,Yan Yang,Wen-Hao Wang,Hong-Yao Shen,Ya-Nan Shao

DOI: https://doi.org/10.1039/d2dt01682f

IF: 4

2022-08-11

Dalton Transactions

Abstract:An organic-inorganic hybrid silver iodobismuthate characteristic of the infrequent [Ag2BiI6L2] cluster (L = I or I3) and the unique Ag/Bi molar ratio (2/1), namely, [Zn(bipy)3]2Ag2BiI6(I)1.355(I3)1.645 (bipy = 2,2'-bipyridine; 1), has been solvothermally synthesized, and structurally, optically and theoretically studied. Intriguingly, compound 1 exhibited the semiconductor behavior with the optical band gap of 2.33 eV, which endows it with the excellent photoelectric and photocatalytic properties. Electronic structure calculations further revealed that relative separate conduction band (CB) and valence band (VB) in compound 1 may be responsible for the good optical activity. Given in this work also include the Hirshfeld surface analyses, thermogravimetric measurement and X-ray photoelectron spectroscopy (XPS) characterization.

chemistry, inorganic & nuclear
Three Metal Complex‐Decorated Halobismuthates: Syntheses, Structures, Semiconducting Behaviors and Theoretical Investigations

Shu-Yue Xie,Bao-Han Li,Jia-Qi Li,Jiu-Jiang Dong,Xiao-Chen Ren,Bo Zhang,Jun Li,Xiao-Ying Huang

DOI: https://doi.org/10.1002/ejic.202400487

IF: 2.551

2024-09-13

European Journal of Inorganic Chemistry

Abstract:Employing metal complex cations as the structural modifiers, three new numbers of hybrid halobismuthates family, namely [NH4][Co(phen)3]BiI6 (phen = 1,10‐phenanthroline; 1), [Zn(phen)2Br][Bi(phen)Br4]·H2O (2) and [Cu(2,2'‐bipy)2Br][Cu(2,2'‐bipy)2Bi2Br9]·H2O (2,2'‐bipy = 2,2'‐bipyridine; 3) have been solvothermally constructed and structurally characterized. X‐ray crystallography analyses show that all compounds characteristic of abundant weak interactions feature the discrete anionic motifs. The obtained hybrid materials possess the semiconducting nature, with the visible light responding optical band gaps of 2.13−2.71 eV. Under the alternating light irradiation, they exhibit excellent photoelectric switching properties, whose photocurrent densities (0.85, 0.24 and 0.43 μA/cm2 for compounds 1−3, respectively) compare well with some high‐performance halobismuthate competitors. Further theoretical calculations of compound 1 reveal that the photosensitive [Co(phen)3]2+ cations contribute greatly to the bottom of conduction bands (CBs) and the top of valence bands (VBs), which may be the important reason for its excellent photoelectric behavior. The analyses of Hirshfeld surface, thermal stability and X‐ray photoelectron spectroscopy were also discussed detailedly in this paper.

chemistry, inorganic & nuclear
Efficient Carrier Transport in 2D Bi2O2Se/CsBi3I10 Perovskite Heterojunction Enables Highly‐Sensitive Broadband Photodetection

Le-Yang Dang,Zhan Wei,Jing Guo,Tian-Hao Cui,Yongjie Wang,Jie-Cai Han,Gui-Gen Wang,Le‐Yang Dang,Tian‐Hao Cui,Jie‐Cai Han,Gui‐Gen Wang

DOI: https://doi.org/10.1002/smll.202306600

IF: 13.3

2023-11-28

Small

Abstract:A 2D Bi2O2Se/CsBi3I10 perovskite heterojunction for highly‐sensitive and broadband photodetector is demonstrated. The effective interfacial charge transfer and strong coupling effect between CsBi3I10 and Bi2O2Se accelerate the photodetector response time to 4.1 μs, and also expand the photodetection ranging from ultraviolet to near‐infrared regions (300‐1500 nm). 2D Bi2O2Se has recently garnered significant attention in the electronics and optoelectronics fields due to its remarkable photosensitivity, broad spectral absorption, and excellent long‐term environmental stability. However, the development of integrated Bi2O2Se photodetector with high performance and low‐power consumption is limited by material synthesis method and the inherent high carrier concentration of Bi2O2Se. Here, a type‐I heterojunction is presented, comprising 2D Bi2O2Se and lead‐free bismuth perovskite CsBi3I10, for fast response and broadband detection. Through effective charge transfer and strong coupling effect at the interfaces of Bi2O2Se and CsBi3I10, the response time is accelerated to 4.1 μs, and the detection range is expanded from ultraviolet to near‐infrared spectral regions (365–1500 nm). The as‐fabricated photodetector exhibits a responsivity of 48.63 AW−1 and a detectivity of 1.22×1012 Jones at 808 nm. Moreover, efficient modulation of the dominant photocurrent generation mechanism from photoconductive to photogating effect leads to sensitive response exceeding 103 AW−1 for heterojunction‐based photo field effect transistor (photo‐FETs). Utilizing the large‐scale growth of both Bi2O2Se and CsBi3I10, the as‐fabricated integrated photodetector array demonstrates outstanding homogeneity and stability of photo‐response performance. The proposed 2D Bi2O2Se/CsBi3I10 perovskite heterojunction holds promising prospects for the future‐generation photodetector arrays and integrated optoelectronic systems.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Two-dimensional Lead-Free Iodide-Based Hybrid Double Perovskites: Crystal Growth, Thin-Film Preparation and Photocurrent Responses

Le-Yu Bi,Yue-Qiao Hu,Mu-Qing Li,Tian-Li Hu,Hao-Lan Zhang,Xing-Tian Yin,Wen-Xiu Que,Mohamed Saber Lassoued,Yan-Zhen Zheng

DOI: https://doi.org/10.1039/c9ta04325j

IF: 11.9

2019-01-01

Journal of Materials Chemistry A

Abstract:Herein, lead-free layered iodide double perovskites (C6H16N2)2MBiI8 (M = Ag/Cu) were synthesized, which showed typical semiconducting properties and obvious photocurrent response.
Semiconductivity and High Stability in Centimetric Two-Dimensional Bismuth–silver Hybrid Double Perovskites

Mohamed Saber Lassoued,Tengbo Wang,Qian-Wen Li,Xiaoyun Liu,Wei-Peng Chen,Bo Jiao,Qing-Yuan Yang,Zhaoxin Wu,Guijiang Zhou,Shujiang Ding,Zhicheng Zhang,Yan-Zhen Zheng

DOI: https://doi.org/10.1039/d2qm00341d

IF: 8.6834

2022-01-01

Materials Chemistry Frontiers

Abstract:We report here two new centimetric two-dimensional Dion–Jacobson bromide double perovskites with outstanding stability, strong photocurrent responses and bluish-white broadband emission.
High-Performance Visible Light Photodetector Based on BiSeI Single Crystal

Xiu Yan,Wei-Li Zhen,Hui-Jie Hu,Li Pi,Chang-Jin Zhang,Wen-Ka Zhu

DOI: https://doi.org/10.1088/0256-307X/38/6/068103

2021-01-01

Chinese Physics Letters

Abstract:The continuing demand for new optoelectronic devices drives researchers to seek new materials suitable for photodetector applications. Recently, ternary compound semiconductors have entered researchers' field of vision, among which chalcohalides have attracted special interest because of their rich properties and unique crystal structure consisting of atom chains and inter-chain van der Waals gaps. We have synthesized high-quality BiSeI single crystals with [110]-plane orientation and fabricated a photodetector. The optoelectronic measurements show a pronounced photocurrent signal with outstanding technical parameters, namely high responsivity (3.2 A/W), specific detectivity (7 x 10(10) Jones) and external quantum efficiency (622%) for lambda = 635 nm, V (ds) = 0.1 V and P (opt) = 0.23 mW/cm(2). The high performance of BiSeI photodetector and its layer structure make it a promising candidate for low-dimensional optoelectronic applications.
Two-Dimensional Cs 2 AgBiBr 6 /WS 2 Heterostructure-Based Photodetector with Boosted Detectivity via Interfacial Engineering

Feier Fang,Yi Wan,Henan Li,Shaofan Fang,Fu Huang,Bo Zhou,Ke Jiang,Vincent Tung,Lain-Jong Li,Yumeng Shi

DOI: https://doi.org/10.1021/acsnano.1c09513

IF: 17.1

2022-02-18

ACS Nano

Abstract:Two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayers have been widely used for optoelectronic devices because of their ultrasensitivity to light detection acquired from their direct gap properties. However, the small cross-section of photon absorption in the atomically thin layer thickness significantly limits the generation of photocarriers, restricting their performance. Here, we integrate monolayer WS2 with 2D perovskites Cs2AgBiBr6, which serve as the light absorption layer, to greatly enhance the photosensitivity of WS2. The efficient charge transfer at the Cs2AgBiBr6/WS2 heterojunction is evidenced by the shortened photoluminescence (PL) decay time of Cs2AgBiBr6. Scanning photocurrent microscopy of Cs2AgBiBr6/WS2/graphene reveals that improved charge extraction from graphene leads to an enhanced photoresponse. The 2D Cs2AgBiBr6/WS2/graphene vertical heterostructure photodetector exhibits a high detectivity (D*) of 1.5 × 1013 Jones with a fast response time of 52.3 μs/53.6 μs and an on/off ratio of 1.02 × 104. It is worth noting that this 2D heterostructure photodetector can realize self-powered light detection behavior with an open-circuit voltage of ∼0.75 V. The results suggest that the 2D perovskites can effectively improve the TMDC layer-based photodetectors for low-power consumption photoelectrical applications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
A New Iodobismuthate-Based Hybrid Containing Mixed Iodobismuthate Clusters Templated by Diammonium Cation: Structure and Photocurrent Response

Zhao-Pei Zhang,Qi-Yan Feng,Qing-Lian Wang,Xing-Yu Huang,Di Chen,Jian Zhou

DOI: https://doi.org/10.1007/s10876-018-1339-9

2018-01-01

Journal of Cluster Science

Abstract:A new iodobismuthate-based hybrid (Me2DABCO)7(BiI6)2(Bi2I9)2.2I3 (1) (Me2DABCO2+ = N,N′-dimethyl-1,4- diazabicyclo[2.2.2] octane) has been structurally determined. The highly interesting feature of 1 lies in its presence of mixed types of iodobismuthate clusters, i.e. mononuclear (BiI6)3− and (Bi2I9)3− dimer in one crystal lattice templated by Me2DABCO2+ cation, which is the first example of mixed iodobismuthate clusters in one lattice. Its absorption zone can be broadened compared with other single iodobismuthate cluster-containing analogy compounds. And due to the strong I···I interactions, an optical gap of 1.61 eV can be observed. The photocurrent response properties before and after heating were discussed, which suggests that the device can be potentially used as temperature-response switch.
Air Induced Formation of Cs3Bi2Br9/Cs3BiBr6 Bulk Heterojunction and Its Dual-band Photodetection Abilities for Light Communication

Fa Cao,Ziqing Li,Xinya Liu,Zhifeng Shi,Xiaosheng Fang

DOI: https://doi.org/10.1002/adfm.202206151

IF: 19

2022-01-01

Advanced Functional Materials

Abstract:Metal-halide perovskites have long carrier diffusion lengths, low trap densities, and high carrier mobilities, and are therefore of value in the development of photodetectors (PDs). However, the research on dual-band lead-free perovskite bulk heterojunction has not been well developed. Here, a novel air induced formation of Cs3Bi2Br9/Cs3BiBr6 bulk heterojunction, reaching a high-performance dual-band photodetecting performance with a UV main band (360 nm) peak responsivity of 5.6 mA W-1 and a blue sub-band (450 nm) peak responsivity of 0.6 mA W-1 at 2 V, is reported. The bulk heterojunction exhibits superior photodetecting performance than that of lateral heterojunction. Furthermore, the PD exhibits a fast response speed (rise time 1.4 mu s and decay time 2.0 mu s) and good cyclic stability. Theoretical and experimental characterizations suggest Cs3Bi2Br9 exhibits a more stable structure in air than that of Cs3BiBr6. The dual-band photodetection abilities of Cs3Bi2Br9/Cs3BiBr6 bulk-heterojunction demonstrate great application prospects in light communication. These state-of-the-art findings shed light on the fabrication of novel dual-band high-performance PDs based on lead-free perovskite bulk-heterojunction.
Two-Dimensional Copper Iodide-Based Inorganic–Organic Hybrid Semiconductors: Synthesis, Structures, and Optical and Transport Properties

Wooseok Ki,Xiuze Hei,Hee Taek Yi,Wei Liu,Simon J. Teat,Mengjun Li,Yang Fang,Vitaly Podzorov,Eric Garfunkel,Jing Li

DOI: https://doi.org/10.1021/acs.chemmater.1c01421

IF: 10.508

2021-06-30

Chemistry of Materials

Abstract:A group of copper iodide-based hybrid semiconductors with the general formula of 2D-CuI(L)0.5 (L = organic ligands) are synthesized and structurally characterized. All compounds are two-dimensional (2D) networks made of one-dimensional (1D) copper iodide staircase chains that are interconnected by bidentate nitrogen-containing ligands. Results from optical absorption and emission experiments and density functional theory (DFT) calculations reveal that their photoluminescence (PL) can be systematically tuned by adjusting the lowest unoccupied molecular orbital (LUMO) energies of the organic ligands. Charge carrier transport measurements were carried out for the first time on single crystals of selected 2D-CuI(L)0.5 structures, and the results show that they possess p-type conductivity with a Hall mobility of ∼1 cm2 V–1 s–1 for 2D-CuI(pm)0.5 and 0.13 cm2 V–1 s–1 for 2D-CuI(pz)0.5, respectively. These values are comparable to or higher than the mobilities of typical highly luminescent organic semiconductors. This work suggests that robust, high-dimensional copper iodide hybrid semiconductors are promising candidates to be considered as a new type of emissive layer for light-emitting diode (LED) devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.1c01421?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.1c01421</a>.Structure plots, PXRD patterns, PL spectra, and DFT calculation results (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.1c01421/suppl_file/cm1c01421_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
Cscdinq(3) (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

Hao Li,Christos D. Malliakas,John A. Peters,Zhifu Liu,Jino Im,Hosub Jin,Collin D. Morris,Li-Dong Zhao,Bruce W. Wessels,Arthur J. Freeman,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1021/cm400634v

IF: 10.508

2013-01-01

Chemistry of Materials

Abstract:Two new compounds CsCdInQ(3) (Q = Se, Te) have been synthesized using a polychalcogenide flux. CsCdInQ(3) (Q = Se, Te) crystals are promising candidates for X-ray and gamma-ray detection. The compounds crystallize in the monoclinic C2/c space group with a layered structure, which is related to the CsInQ(2) (Q = Se, Te) ternary compounds. The cell parameters are: a = 11.708(2) angstrom, b = 11.712(2) angstrom, c = 23.051(5) angstrom, beta = 97.28(3)degrees for CsCdInSe3 and a = 12.523(3) angstrom, b = 12.517(3) angstrom, c = 24.441(5) angstrom, beta = 97.38(3)degrees for CsCdInTe3. Both the Se and Te analogues are wide-band-gap semiconductors with optical band gaps of 2.4 and 1.78 eV for CsCdInSe3 and CsCdInTe3, respectively. High-purity polycrystalline raw material for crystal growth was synthesized by the vapor transfer method for CsCdInQ(3). Large single crystals up to 1 cm have been grown using the vertical Bridgman method and exhibit photoconductive response. The electrical resistivity of the crystals is highly anisotropic. The electronic structure calculation within the density functional theory (DFT) framework indicates a small effective mass for the carriers. Photoconductivity measurements on the as grown CsCdInQ(3) crystals gives high carrier mobility-lifetime (mu tau) products comparable to other detector materials such as alpha-HgI2, PbI2, and CdxZn1-xTe (CZT).

Two-dimensional semiconducting Cs( i )/Bi( iii ) bimetallic iodide hybrids for light detection

Two-dimensional semiconducting Cu(I)/Sb(III) bimetallic hybrid iodides with a double perovskite structure and photocurrent response

Stable Two-Dimensional Lead Iodide Hybrid Materials for Light Detection and Broadband Photoluminescence

A Semiconductive Copper Iodobismuthate Hybrid: Structure, Optical Properties and Photocurrent Response.

Anisotropic optoelectronic properties of lead-free Cs3Bi2I9 single-crystal photodetectors

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Ultrahigh-performance photodetectors based on low-dimensional Cs2AgBiBr6/CdS heterojunction

Fast Fabrication of WS<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructures for High-Performance Photodetection

A Lead-Iodide Based Single Crystal Semiconductor: Exploring Multi-Orientation Photoconductive Behaviour Via Intervening Isopropyl Viologen Component Between The Inorganic [Pb2i6](N)(2-) Wires

Two Silver Halobismuthate Hybrids Decorated by Photosensitive Metal Complexes: Syntheses, Structures, Photoelectric Properties, and Theoretical Studies

A new metal complex-templated silver iodobismuthate exhibiting photocurrent response and photocatalytic property

Three Metal Complex‐Decorated Halobismuthates: Syntheses, Structures, Semiconducting Behaviors and Theoretical Investigations

Efficient Carrier Transport in 2D Bi2O2Se/CsBi3I10 Perovskite Heterojunction Enables Highly‐Sensitive Broadband Photodetection

Two-dimensional Lead-Free Iodide-Based Hybrid Double Perovskites: Crystal Growth, Thin-Film Preparation and Photocurrent Responses

Semiconductivity and High Stability in Centimetric Two-Dimensional Bismuth–silver Hybrid Double Perovskites

High-Performance Visible Light Photodetector Based on BiSeI Single Crystal

Two-Dimensional Cs 2 AgBiBr 6 /WS 2 Heterostructure-Based Photodetector with Boosted Detectivity via Interfacial Engineering

A New Iodobismuthate-Based Hybrid Containing Mixed Iodobismuthate Clusters Templated by Diammonium Cation: Structure and Photocurrent Response

Air Induced Formation of Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub>/Cs<sub>3</sub>BiBr<sub>6</sub > Bulk Heterojunction and Its Dual-band Photodetection Abilities for Light Communication

Two-Dimensional Copper Iodide-Based Inorganic–Organic Hybrid Semiconductors: Synthesis, Structures, and Optical and Transport Properties

Cscdinq(3) (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection