Abstract:The present paper presents a straightforward method for producing thin film layers of sulfide quantum dots (PbS-QDs) on a glass substrate using chemical solution deposition (CSD) assisted by dipcoating technique. The deposited PbS-QDs films were subjected to a comprehensive analysis using atomic force microscopy (AFM), energy dispersive X-ray (EDX) scanning electron microscopy (SEM), X-ray diffraction (XRD), UV–vis–IR absorption, and photoluminescence spectroscopic (PL) techniques to investigate the effects of varying concentrations of diethanol amine (DEA) on their morphology, crystal structure, elemental composition, light absorption, and emission characteristics. The spherical shape of the PbS-QDs was confirmed by AFM and SEM images with average sizes around 100 and 50 nm, respectively. The energy dispersive X-ray (EDX) analysis provides evidence the existence of Pb and S elements within the PbS matrix. X-ray diffraction (XRD) results validate that the deposited films exhibit high crystallinity, with a preferential orientation along the (111) plane and a face-centered cubic lattice structure of PbS. The crystallite size of PbS is measured to be 46.6 nm. Based on the optical absorption measurements, we have determined the size range of PbS nanocrystals to be between 4.3 and 11.5 nm. The optical studies reveal the presence of two optical absorption edges within the visible and infrared spectrum, two direct band gap energy, two cut-off wavelengths, two confinement energy, two Urbach energy tail, and dual emission peaks of PbS-QDs at room temperature. The analysis reveals the presence of two distinct band gap energies, one in the visible range (1.3–2.28 eV) and the other in the infrared range (0.65–0.88 eV), which can be attributed to the formation of two distinct sizes of quantum dots situated in two different layers. The first layer, deposited directly on the glass substrate, comprises quantum dots with an average size of approximately 5.2 nm, while the second layer contains quantum dots with an average size of about 9.5 nm. This ability to tune the band gap of PbS in the visible range up to the IR band (0.65–2.28 eV) is a critical feature that holds the potential for the development of innovative optoelectronic devices.

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