Regulating Mn 2+ /Mn 4+ Activators in ZnGa 2 O 4 via Mg 2+ /Ge 4+ Doping to Generate Multimode Luminescence for Advanced Anti-Counterfeiting
Te Si,Qi Zhu,Junqing Xiahou,Xudong Sun,Ji-Guang Li
DOI: https://doi.org/10.1021/acsaelm.0c01121
IF: 4.494
2021-05-13
ACS Applied Electronic Materials
Abstract:Traditional fluorescent anti-counterfeiting materials usually display monochromatic luminescence at a fixed excitation mode, which greatly reduces the efficiency of anti-counterfeiting applications. Recently, developing a multilevel anti-counterfeiting material with tunable photoluminescence is a hot topic in the arena of advanced anti-counterfeit research. Here, spinel-structured solid solutions of ZnGa<sub>2–<i>x</i></sub>(Mg/Ge)<i><sub>x</sub></i>O<sub>4</sub>:0.001Mn (<i>x</i> = 0–1.2) have been successfully synthesized by a high-temperature solid-state reaction. In this solid solution, Mn<sup>2+</sup> and Mn<sup>4+</sup> ions were substituted for the tetrahedral site (Zn site) and the octahedral site (Ga site), respectively, which emitted a green light at ∼505 nm with afterglow and a red light at ∼668 nm with the absence of afterglow. The Mn<sup>2+</sup> and Mn<sup>4+</sup> luminescent centers in ZnGa<sub>2</sub>O<sub>4</sub> were effectively regulated by the incorporation of Mg<sup>2+</sup>/Ge<sup>4+</sup>, which resulted in more Mg<sup>2+</sup> ions occupying the Zn site and thus leading to more Mn<sup>4+</sup> ions in the Ga site and less Mn<sup>2+</sup> ions in the Zn site. Therefore, doping Mg<sup>2+</sup>/Ge<sup>4+</sup> contributed to a greatly enhanced red emission for Mn<sup>4+</sup> ions at ∼668 nm and a weakened green emission for Mn<sup>2+</sup> ions at ∼505 nm. The luminescent materials prepared in this study show dynamic and multicolor changes and a higher anti-counterfeiting security, indicating that they have potential for use in advanced luminescent anti-counterfeit materials. The research results in this work provide guidance for the development of multimode luminescent materials in anti-counterfeiting applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c01121?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c01121</a>.Rietveld refinement of ZGMGM and the relationship between the lattice constant <i>a</i> and the <i>x</i> value; results of the Rietveld refinement for ZGMGM; XPS survey spectrum of the ZGMGM (<i>x</i> = 1) sample and high-resolution XPS spectra of ZGMGM; relationship between the XPS area percent and <i>x</i> value for Mg 1s, Zn 2p<sub>3/2</sub>, and Ga 2p<sub>3/2</sub> core levels; binding energies of Mg 1s, Zn 2p<sub>3/2</sub>, Ga 2p<sub>3/2</sub>, and Ge 2p<sub>3/2</sub> core levels; the relative ratio diagram of the peak intensity of ∼714 cm<sup>–1</sup> to that of ∼610 cm<sup>–1</sup>; crystal field parameters of ZGMGM; temperature-dependent PL spectra for the ZGMGM (<i>x</i> = 1) phosphor; and plot of ln(<i>I</i><sub>0</sub>/<i>I</i><sub>T</sub> – 1) vs 1/<i>KT</i> for ZGMGM (<i>x</i> = 1 sample) under excitation at 341 nm (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c01121/suppl_file/el0c01121_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic