Comparative analysis of electronic and thermoelectric properties of strained and unstrained IrX 3 (X=P, As) skutterudite materials

Fatma Mahi,Zahira Faiza Meghoufel,Zohra Mostefa,Ilham Kara,Abdelaziz Boukra
DOI: https://doi.org/10.1088/1402-4896/ad9066
2024-11-10
Physica Scripta
Abstract:The electronic and thermoelectric properties of unfilled IrP 3 and IrAs 3 skutterudites materials under hydrostatic pressures are investigated using density functional theory (DFT) combined with semi-classical Boltzmann transport theory. Calculations of the elastic properties and phonon frequencies for both strained and unstrained materials demonstrate that they are mechanically and dynamically stable, with ductility varying based on the applied pressure. For pressures ranging from 0 to 30 GPa, the band structure calculations with the GGA+TB-mBJ approximation reveal that the band gap varies from 0.400 to 0.144 eV for IrP3 and from 0.341 to 0.515 eV for IrAs 3 . At 0 GPa, IrAs 3 exhibits a direct band gap, whereas IrP 3 has an indirect band gap. As pressure increases, IrAs 3 undergoes a transition from a direct to an indirect band gap above 10 GPa, while IrP 3 maintains its indirect band gap characteristic throughout the pressure range. The thermoelectric properties, at various pressures and temperatures between 300 and 1200 K, are also computed. These properties include the Seebeck coefficient, electrical conductivity, thermal conductivity (both electronic and lattice contributions), and relaxation time. The ideal conditions for efficient thermoelectric properties in IrAs3 are achieved at 30 GPa and 1200 K, with an optimal n-type doping concentration of 56×10 19 cm -3 , resulting in a ZT of 0.68. For IrP 3 , a ZT of approximately 0.46 is obtained at 600 K and 5 GPa, with a p-type doping concentration of 6.0×10 18 cm -3 . The present study provides valuable insights into the behavior of skutterudite materials under strain, offering pathways for enhancing their performance in practical applications.
physics, multidisciplinary
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