Abstract:The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

Universal Way to Enhance Solution-Processed High-κ Oxide Dielectrics Performance by Sulfate Incorporation

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

Oxygen incorporated solution-processed high-kappa La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

Frontispiz: High‐Density Cationic Defects Coupling with Local Alkaline‐Enriched Environment for Efficient and Stable Water Oxidation

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Oxygen incorporated solution-processed high-<i>κ</i> La<sub>2</sub>O<sub>3</sub> dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics

High-performing polysulfate dielectrics for electrostatic energy storage under harsh conditions

Super-tetragonal Sr4Al2O7: a versatile sacrificial layer for high-integrity freestanding oxide membranes

Boronization: A General Strategy for Rare Earth Oxides with Enhanced High-κ Gate Dielectric Performance

Enhancing the heterointerface stability of Al2O3/Ba0.5Sr0.5TiO3/Al2O3 composite thin films by adaptive anodizing method under high electric field

Microwave Plasma Rapid Heating Towards Robust Cathode/electrolyte Interface for Solid Oxide Fuel Cells

Superior electronic/ionic transport dynamics of Zn-Co-OH/MnO 2 heterointerface containing oxygen vacancies for pseudocapacitive storage

Ultrahigh Effective Diffusion in Oxide by Engineering the Interfacial Transporter Channels

Strong Electronic Interaction in High-Entropy Oxide Enhances Oxygen Evolution Reaction

Compositionally Complex Perovskite Oxides as a New Class of Li-Ion Solid Electrolytes

Ultrahigh-Efficiency Superior Energy Storage in Lead-Free Films with a Simple Composition.

Regulate electric double layer for one-step synthesize and modulate the morphology of (oxy)hydroxides

Two-step Doping of SiO2 and CaO for High-Frequency MnZn Power Ferrites

Tailoring the Surface Cation Configuration of Ruddlesden–Popper Perovskites for Controllable Water Oxidation Performance