Effect of C∕Si ratio on deep levels in epitaxial 4H–SiC

C. Litton,D. Johnstone,S. Akarca-Biyikli,K. Ramaiah,I. Bhat,T. Chow,J. Kim,E. Schubert

DOI: https://doi.org/10.1063/1.2161388

2006-03-23

Abstract:Changing the ratio of carbon to silicon during the epitaxial 4H–SiC growth is expected to alter the dominant deep level trap, which has been attributed to a native defect. The C∕Si ratio was changed from one to six during epitaxial growth of SiC. Diodes fabricated on the epitaxial layer were then characterized using current-voltage and deep level transient spectroscopy. The single peak at 340K (Z1/Z2 peak), was deconvolved into two traps, closely spaced in energy. The concentration of one of the Z1/Z2 traps decreased with increasing C∕Si ratio. This result opposes theoretical predictions of carbon interstitial components, and supports assignment to a silicon antisite or carbon vacancy relationship. The concentration of the second component of the peak at 340K did not depend on the C∕Si ratio, which would indicate an impurity in an interstitial site.