Abstract:Materials featuring anomalous suppression of density fluctuations over large length scales are emerging systems known as disordered hyperuniform. The underlying hidden order renders them appealing for several applications, such as light management and topologically protected electronic states. These applications require scalable fabrication, which is hard to achieve with available top-down approaches. Theoretically, it is known that spinodal decomposition can lead to disordered hyperuniform architectures. Spontaneous formation of stable patterns could thus be a viable path for the bottom-up fabrication of these materials. Here we show that mono-crystalline semiconductor-based structures, in particular Si$_{1-x}$Ge$_{x}$ layers deposited on silicon-on-insulator substrates, can undergo spinodal solid-state dewetting featuring correlated disorder with an effective hyperuniform character. Nano- to micro-metric sized structures targeting specific morphologies and hyperuniform character can be obtained, proving the generality of the approach and paving the way for technological applications of disordered hyperuniform metamaterials. Phase-field simulations explain the underlying non-linear dynamics and the physical origin of the emerging patterns.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to fabricate single - crystal semiconductor structures with effective hyperuniform properties by a bottom - up approach. Specifically, the author explores the possibility of forming these structures through the spinodal solid - state dewetting process. The following are the main issues and background involved in the paper: 1. **Requirement Background**: - **Applications of Hyperuniform Materials**: Due to their property of suppressing density fluctuations on a large scale, hyperuniform materials have broad application potential in fields such as light management and topologically protected electronic states. - **Limitations of Existing Fabrication Methods**: Traditional top - down fabrication methods are difficult to achieve large - scale production and are relatively costly. 2. **Theoretical Basis**: - **Spinodal Decomposition**: It is known theoretically that spinodal decomposition can lead to disordered but hyperuniform architectures. This spontaneously formed stable pattern may be a viable path for fabricating these materials. - **Surface Dewetting Phenomenon**: Liquid films (such as metals and polymers) can undergo dewetting through the amplification of surface inhomogeneities. However, in semiconductor and single - crystal systems, this process is usually not achievable due to the high melting point. 3. **Research Objectives**: - **Verify Feasibility**: Prove that single - crystal semiconductor films (especially Si$_{1 - x}$Ge$_x$ layers deposited on a silicon substrate on an insulator) can form nano - to micro - scale structures with relevant disorder and effective hyperuniform properties through spinodal solid - state dewetting. - **Understand the Mechanism**: Explain the underlying nonlinear dynamics and physical origin through phase - field simulation and reveal the mechanism of pattern formation. - **Regulate Parameters**: Explore how to control the morphology, size, and hyperuniformity of the formed structures by adjusting parameters such as temperature and thickness. 4. **Practical Significance**: - **Industrial Application Prospects**: Using common and cost - effective materials (such as UT - SOI substrates and Si$_{1 - x}$Ge$_x$ alloys) provides a practical platform for industrialization, which can be used for power, light, or matter management. - **Performance Advantages**: Compared with roughly etched materials, the atomically smooth single - crystal prepared by this method has more superior electronic properties. In summary, this research aims to explore a new, scalable, and easily regulated bottom - up method for fabricating hyperuniform single - crystal semiconductor structures to meet the current increasing demand for high - performance materials.

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