Spatially controlled fabrication of single NV centers in IIa HPHT diamond

S. D. Trofimov,S. A. Tarelkin,S. V. Bolshedvorskii,V. S. Bormashov,S. Yu. Troshchiev,A. V. Golovanov,N. V. Luparev,D. D. Prikhodko,K. N. Boldyrev,S. A. Terentiev,A. V. Akimov,N. I. Kargin,N. S. Kukin,A. S. Gusev,A. A. Shemukhin,Yu. V. Balakshin,S. G. Buga,V. D. Blank

DOI: https://doi.org/10.1364/OME.10.000198

2019-12-04

Abstract:Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a good material for applications that involve single NV centers.

Applied Physics,Materials Science