Abstract:Quantum transport in magnetic topological insulators reveals the strong interplay between the magnetism and topology of electronic band structures. A recent experiment on magnetically doped topological insulator Bi2Se3 thin films showed the anomalous temperature dependence of the magnetoconductivity while their field dependence presents a clear signature of weak anti-localization [Tkac et al., Phys. Rev. Lett. 123, 036406(2019)]. Here we demonstrate that the tiny mass of the surface electrons induced by the bulk magnetization leads to a temperature-dependent correction to the \pi Berry phase, and generates a decoherence mechanism to the phase coherence length of the surface electrons. As a consequence, the quantum correction to the conductivity can exhibit non-monotonic behavior by decreasing the temperature. This effect is attributed to the close relation of the Berry phase and quantum interference of the topological surface electrons in quantum topological materials.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the phenomenon that the quantum correction of conductivity in magnetic topological insulators (MTIs) exhibits abnormal behavior as the temperature changes. Specifically, it has been experimentally observed that in some doped Bi₂Se₃ thin films, the temperature - dependence of conductivity does not match theoretical expectations, especially showing non - monotonic behavior at low temperatures. ### Problem Background 1. **Weak Anti - Localization (WAL) Phenomenon**: - In traditional three - dimensional topological insulators (3D TIs), due to the non - trivial π - Berry phase, the topological surface states will exhibit the WAL effect under a weak magnetic field, that is, the magnetoconductivity shows a negative trough in a weak magnetic field. - Theoretically, as the temperature rises, the conductivity correction caused by the WAL effect should decrease. However, in experiments, it has been found that in some cases, the temperature - dependence of conductivity is contrary to this expectation. 2. **Doping Effect**: - Recent studies have shown that even considering the influence of electron - electron interactions, Mn - doped Bi₂Se₃ thin films still exhibit this contradictory temperature - dependence. - For undoped Bi₂Se₃ samples, the magnetoconductivity δσ(B) changes monotonically with temperature, while for doped samples (such as 4% and 8% Mn), it shows non - monotonic temperature - dependence. ### Core Problem of the Paper The paper aims to explain why in magnetically - doped topological insulators, the quantum correction of conductivity shows an abnormal non - monotonic behavior as the temperature changes. Specifically: - Doping causes the surface states to obtain a finite mass, thus changing the π - Berry phase. - This change introduces a new quantum decoherence mechanism, making the quantum correction of conductivity show a complex non - monotonic behavior as the temperature changes. ### Solutions The authors explain this phenomenon through the following points: 1. **Model Hamiltonian and Spin Polarization**: - A two - dimensional Dirac fermion model including a mass term is introduced to describe the influence of magnetic doping on the surface states. - The mass term causes the spin polarization η to change, which in turn affects the Berry phase. 2. **Quantum Interference and Cooperon Channels**: - The contributions of different Cooperon channels to the quantum correction of conductivity are calculated using Feynman diagram techniques. - It is found that when the spin polarization η is not zero, a new decoherence mechanism will appear, making the conductivity correction show non - monotonic behavior as the temperature changes. 3. **Temperature - Dependence Analysis**: - The change of spin polarization η with temperature is analyzed, and how this change affects the temperature - dependence of conductivity correction. - When η changes with temperature, the slope κ of conductivity correction will also change, thus explaining the non - monotonic behavior observed in experiments. ### Conclusion By introducing the influence of magnetic doping on the surface - state mass, the paper successfully explains the abnormal temperature - dependence of conductivity quantum correction in magnetic topological insulators. In particular, by considering the temperature - dependence correction of the Berry phase, the authors propose a reasonable physical mechanism to explain the non - monotonic behavior in experiments.

Anomalous Temperature Dependence of Quantum Correction to the Conductivity of Magnetic Topological Insulators

Quantum Transport Phenomena in Magnetic Topological Insulators

Kondo Signatures of a Quantum Magnetic Impurity in Topological Superconductors

Quantum transport in topological semimetals under magnetic fields

Anomalous anisotropic magnetoresistance in topological insulator films

Confined-Path Interference Suppressed Quantum Correction On Weak Antilocalization Effect In A Bisbtese2 Topological Insulator

Quantum metric-induced nonlinear transport in a topological antiferromagnet

Disentangling the Magnetoelectric and Thermoelectric Transport in Topological Insulator Thin Films

Quantum Corrections Crossover and Ferromagnetism in Magnetic Topological Insulators

Spin fluctuations in quantized transport of magnetic topological insulators

Electrodynamics of the quantum anomalous Hall state in a magnetically doped topological insulator

Electrically tuned magnetic order and magnetoresistance in a topological insulator

Tunable Surface Conductivity In Bi2se3 Revealed In Diffusive Electron Transport

Quantized Anomalous Hall Effect in Magnetic Topological Insulators

Interplay of anomalous Hall angle and magnetic anisotropy in ferromagnetic topological crystalline insulators

Anomalous Nernst effect on a magnetically-doped topological insulator surface: A Green's function approach

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons

Quantum Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi 2 Te 4

Weak localization and weak anti-localization in topological insulators

Phonon and defect mediated quantum anomalous Hall insulator to metal transition in magnetically doped topological insulators