Resonant photovoltaic effect in doped magnetic semiconductors

Pankaj Bhalla,Allan H. MacDonald,Dimitrie Culcer

DOI: https://doi.org/10.1103/PhysRevLett.124.087402

2019-10-15

Abstract:The rectified non-linear response of a clean undoped semiconductor to an AC electric field includes a well known intrinsic contribution -- the shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears that is due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect (RPE), produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the RPE for a model of the surface states of a magnetized topological insulator.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper aims to solve is to explore and understand a new nonlinear optical effect that occurs in doped magnetic semiconductors, namely the Resonant Photovoltaic Effect (RPE). Specifically, the author attempts to reveal the direct - current photocurrent response generated by the combined action of the anomalous velocity of Bloch states and the oscillating Fermi surface when Kramers degeneracy is broken. This effect is particularly significant in doped semiconductors or semimetals with approximate particle - hole symmetry.

### Main Problem Analysis

1. **Research Background**:
- Previous studies have mainly focused on undoped materials, and less attention has been paid to the possible Fermi - surface effects in doped systems.
- By introducing the Resonant Photovoltaic Effect (RPE), this paper explores the nonlinear response of doped semiconductors driven by an alternating electric field, especially the generation mechanism of its direct - current photocurrent.

2. **Research Objectives**:
- **Identify New Effect**: Determine the Resonant Photovoltaic Effect in doped magnetic semiconductors and explain its physical mechanism.
- **Theoretical Modeling**: Establish a model to describe RPE through quantum transport theory, including considering the influence of scattering terms.
- **Experimental Verification**: Verify the performance of RPE under different parameters through numerical simulation, especially its application in the surface states of topological insulators.

3. **Key Findings**:
- RPE is jointly caused by the anomalous velocity of Bloch states and the oscillation of the Fermi surface, and these factors lead to a non - zero time - averaged current.
- In systems with approximate particle - hole symmetry, the RPE effect is the strongest, especially in magnetized topological insulators.
- The intensity of RPE is closely related to the Fermi level, the warping coefficient, and the asymmetry of the Fermi surface.

4. **Formula Expression**:
- The expression for the RPE current is:
\[
j^{(2)}_x = j^{(2)}_{x,\text{od}} + j^{(2)}_{x,\text{d}}
\]
where \( j^{(2)}_{x,\text{od}} \) and \( j^{(2)}_{x,\text{d}} \) represent the currents contributed by the off - diagonal and diagonal parts respectively.

5. **Conclusion**:
- RPE provides a new mechanism for generating direct - current photocurrent, especially suitable for magnetic - doped semiconductors and topological insulators with time - reversal symmetry breaking.
- This effect is expected to be applied in future low - energy - consumption electronic devices and optoelectronic devices.

Through the above analysis, this paper not only expands the understanding of nonlinear optical responses but also provides a theoretical basis and technical guidance for the development of new optoelectronic devices.