Abstract:The electronic structure calculation for the nanoclusters of (AsSiTeB/SiAsBTe) quaternary semiconductor alloy belonging to the (III-V Group elements) is performed. The two clusters one in the linear form and the other in the bent form have been studied under the framework of Density Functional Theory (DFT) using the B3LYP functional and LANL2DZ basis set with the software packaged GAUSSIAN 16 . We have discussed the Optimised Energy, Frontier Orbital Energy Gap in terms of HOMO-LUMO, Dipole Moment, Ionisation Potential, Electron Affinity, Binding Energy and Embedding Energy value in the research work and we have also calculated the Density of States (DoS) spectrum for the above quaternary system for two nanoclusters. The application of these compounds or alloys are mainly in the Light emitting diodes. Motivation for this research work is to look for electronic and geometric data of nanocluster (AsSiTeB/SiAsBTe).

What problem does this paper attempt to address?

The problem that this paper aims to solve is to study the electronic structure of AsSiTeB/SiAsBTe nanoclusters, especially the electronic properties of these clusters in different geometric configurations. Specifically, the author carried out optimization calculations on nanoclusters in both linear and bent configurations by using the B3LYP functional and LANL2DZ basis set in density functional theory (DFT). The main research contents include: 1. **Optimization energy**: The optimization energies of the linear and bent configurations were calculated to determine which configuration is more stable. 2. **Frontier orbital energy gap (HOMO - LUMO energy gap)**: The energy gaps between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the two configurations were calculated to evaluate their electron transfer ability and band - gap energy. 3. **Dipole moment**: The dipole moments of the two configurations were calculated to understand their performance in charge separation. 4. **Ionization potential**: The ionization potentials of the two configurations were calculated to evaluate their ability to release electrons. 5. **Electron affinity**: The electron affinities of the two configurations were calculated to evaluate their ability to accept electrons. 6. **Binding energy**: The binding energies of the two configurations were calculated to evaluate their stability. 7. **Embedding energy**: The embedding energies of the two configurations were calculated to evaluate the difficulty of introducing foreign atoms. 8. **Density of states (DoS)**: The density of states spectra of the two configurations were calculated to analyze the distribution of their electronic states. 9. **Chemical hardness**: The chemical hardnesses of the two configurations were calculated to evaluate their chemical reactivity. 10. **Electronegativity**: The electronegativities of the two configurations were calculated to evaluate their electron - accepting ability. 11. **Electrophilicity**: The electrophilicities of the two configurations were calculated to evaluate their ability as electron acceptors. 12. **Vibrational properties**: The vibrational properties of the two configurations were analyzed by infrared spectroscopy and Raman spectroscopy to understand their activities in the far - infrared to mid - infrared regions. Through these calculations and analyses, the author hopes to provide basic data and theoretical support for the potential applications of AsSiTeB/SiAsBTe nanoclusters in optoelectronic devices such as light - emitting diodes and solar cells.

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