Type and Degree of Covalence: Empirical Derivation and Implications

Yevgeny Rakita,Thomas Kirchartz,Gary Hodes,David Cahen

DOI: https://doi.org/10.48550/arXiv.1907.03971

2019-07-09

Abstract:The way atoms attach to each other defines the function(s), e.g., mechanical, optical, electronic, of a given material. The nature of the chemical bond is, therefore, one of the most fundamental issues in materials. Both ionic interactions, i.e., resulting from electrical charges associated with the atoms, and covalent ones, i.e., the sharing of electrons between nuclei of different atoms, are usually viewed as forces that attract between atoms to form a rigid structure. Although less common for solid materials, it was shown theoretically to be possible for covalent interactions at the chemically-active electronic shell (or valence-band maximum) of semiconductors to reverse their more common nature and become repulsive, i.e., act against bonding. Some semiconductors with such predicted anti-bonding valence-band maximum levels (such as halide perovskites) show experimentally some amazing (opto-) electronic properties. Predictions that anti-bonding character can allow tolerance for existing defects, at least in part, can explain the superior properties of such semiconductors. Although there are known experimental ways to estimate the degree of the covalent nature (e.g., electronegativity), this was not possible hitherto for the type, i.e., distinguishing whether a material exhibits bonding or anti-bonding covalent interactions. We have developed a simple way to reveal the complete nature (both type and degree) of chemical bonds, using experimental data. After confirming our development with classical models and theoretical predictions, with a set of ~40 different functional semi-conductors, we show how knowledge of the complete nature of covalent bonding is of critical importance for fundamental properties of semiconductors.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about how to quantify the covalent characteristics of chemical bonds in semiconductor materials and their influence on material properties. Specifically, the paper aims to develop a method to identify the types of chemical bonds in semiconductor materials (i.e., attractive "bonding" or repulsive "antibonding") and the degree of covalency, and to explore the influence of these characteristics on the basic (photo) - electrical properties of materials.

The paper points out that although "covalent characteristics" are usually studied by theoretical methods, there is a lack of empirical quantification methods for the degree of covalency. The author proposes a method based on relative structural polarizability (RSP), where RSP is defined as the ratio of structural polarizability to electronic (hard - sphere) polarizability, that is, \( \text{RSP} = \left(\frac{\alpha_{\text{struct}}}{\alpha_{\text{elec}}} - 1\right) \). In addition, the band - gap pressure coefficient \( \frac{\Delta E_g}{\Delta p} \) can also provide a rough indication of the type of covalent bond.

The paper further explores the differences in structural and chemical trends between semiconductors with "antibonding" valence bands and other "classical" semiconductors, and shows that the nature of covalent bonds has a significant impact on the basic (photo) - electrical properties of heteropolar compounds. Through the study of more than 40 different compounds, the author demonstrates the correlation between covalent properties and the effective mass of electrons, the shielding ability of the perturbed electric field, and the mobility of free charges. These results provide tools for identifying the bond properties of semiconductor materials and are helpful for guiding the discovery and design of new materials.