Abstract:The ultra-strong light-matter coupling regime has been demonstrated in a novel three-dimensional inductor-capacitor (LC) circuit resonator, embedding a semiconductor two-dimensional electron gas in the capacitive part. The fundamental resonance of the LC circuit interacts with the intersubband plasmon excitation of the electron gas at $\omega_c = 3.3$~THz with a normalized coupling strength $2\Omega_R/\omega_c = 0.27$. Light matter interaction is driven by the quasi-static electric field in the capacitors, and takes place in a highly subwavelength effective volume $V_{\mathrm{eff}} = 10^{-6}\lambda_0^3$ . This enables the observation of the ultra-strong light-matter coupling with $2.4\times10^3$ electrons only. Notably, our fabrication protocol can be applied to the integration of a semiconductor region into arbitrary nano-engineered three dimensional meta-atoms. This circuit architecture can be considered the building block of metamaterials for ultra-low dark current detectors.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve ultra - strong light - matter coupling at the deep sub - wavelength scale. Specifically, the researchers designed a new type of three - dimensional inductor - capacitor (LC) circuit resonator, which embeds a semiconductor two - dimensional electron gas (2DEG) to achieve ultra - strong coupling with the inter - sub - band plasma excitation of the electron gas in the terahertz (THz) frequency band. The strength of this coupling is characterized by the normalized coupling strength $2\Omega_R/\omega_c = 0.27$, where $\omega_c$ is the resonant frequency and $\Omega_R$ is the Rabi frequency. In addition, this study also shows how to achieve this coupling within a very small effective volume $V_{\text{eff}} = 10^{-6}\lambda_0^3$, and the ultra - strong light - matter coupling phenomenon can be observed with only about $2.4\times 10^3$ electrons. ### Main problems 1. **Achieving ultra - strong light - matter coupling**: - The researchers hope to achieve ultra - strong light - matter coupling at the deep sub - wavelength scale by designing a new type of three - dimensional LC resonator. - This coupling occurs in the terahertz frequency band and involves inter - sub - band transitions in semiconductor quantum wells. 2. **Reducing the effective mode volume**: - By optimizing the design of the resonator, the researchers hope to achieve efficient light - matter coupling within a very small effective mode volume. - They have successfully reduced the effective mode volume to $V_{\text{eff}} = 10^{-6}\lambda_0^3$, which is two orders of magnitude smaller than that of the traditional bimetallic cavity. 3. **Increasing the coupling strength**: - By optimizing the geometric structure and material parameters of the resonator, the researchers have increased the coupling strength to a normalized coupling strength of $2\Omega_R/\omega_c = 0.27$. - This coupling strength is relatively high in similar systems, indicating that this design has significant advantages in achieving ultra - strong coupling. ### Implementation methods - **Designing a three - dimensional LC resonator**: A new type of three - dimensional LC resonator was designed by embedding a semiconductor two - dimensional electron gas in the capacitor part. - **Optimizing the resonator structure**: By adjusting the internal perimeter $P_{\text{int}}$ of the resonator and the size $W$ of the capacitor, precise control of the resonant frequency was achieved. - **Experimental verification**: The performance of the resonator was verified through reflectivity experiments and numerical simulations, and the ultra - strong light - matter coupling phenomenon was observed. ### Conclusion This study has successfully achieved ultra - strong light - matter coupling at the deep sub - wavelength scale, demonstrating the potential of using three - dimensional LC resonators in the terahertz frequency band. This design not only reduces the effective mode volume but also increases the coupling strength, providing new possibilities for future optoelectronic devices and sensors.

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