Stability of the novel interorbital-hopping mechanism for ferromagnetism in multi-orbital Hubbard models
Ling-Fang Lin,Yang Zhang,Gonzalo Alvarez,Michael A. McGuire,Andrew F. May,Adriana Moreo,Elbio Dagotto
DOI: https://doi.org/10.1038/s42005-023-01314-w
2023-03-15
Abstract:Recently, it was argued that a ferromagnetic (FM) insulating phase can be induced by a novel {\it interorbital} hopping mechanism. Here, we study the stability range of this novel FM phase under modifications in the crystal fields and electronic correlation strength, constructing a theoretical phase diagram. A plethora of states is unveiled, including the FM Mott insulator (MI), a FM orbital-selective Mott phase (OSMP), several anferromagnetic (AFM) MI phases, an AFM metallic state, and a FM metal as well. Our most interesting result is that the FM regime, either in MI or OSMP forms, is shown to be stable in {\it large} portions of the phase diagram, at both intermediate and strong electronic correlations, respectively. Our results demonstrate via a detailed example that the recently proposed novel mechanism to stabilize FM insulators is not fragile but instead robust, and may enlarge substantially the relatively small family of known FM insulators.
Strongly Correlated Electrons