A Microwave Oscillator Based on a Single Straintronic Magneto-tunneling Junction

Md Ahsanul Abeed,Justine L. Drobitch,Supriyo Bandyopadhyay

DOI: https://doi.org/10.1103/PhysRevApplied.11.054069

2019-07-17

Abstract:There is growing interest in exploring nanomagnetic devices as potential replacements for electronic devices (e.g. transistors) in digital switching circuits and systems. A special class of nanomagnetic devices are switched with electrically generated mechanical strain leading to electrical control of magnetism. Straintronic magneto-tunneling junctions (s-MTJ) belong to this category. Their soft layers are composed of two-phase multiferroics comprising a magnetostrictive layer elastically coupled to a piezoelectric layer. Here, we show that a single straintronic magneto-tunneling junction with a passive resistor can act as a microwave oscillator whose traditional implementation would have required microwave operational amplifiers, capacitors and resistors. This reduces device footprint and cost, while improving device reliability. This is an analog application of magnetic devices where magnetic interactions (interaction between the shape anisotropy, strain anisotropy, dipolar coupling field and spin transfer torque in the soft layer of the s-MTJ) are exploited to implement an oscillator with reduced footprint.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to use a single strained - electron magnetic tunnel junction (s - MTJ) and a passive resistor to achieve the function of a microwave oscillator**, thereby reducing the use of traditional electronic components, reducing the cost and size of the device, and at the same time improving the reliability of the device.

### Specific problem description:

1. **Limitations of traditional microwave oscillators**:
- Traditional microwave oscillators need to use multiple types of electronic components such as microwave operational amplifiers, capacitors and resistors.
- These components not only increase the size and cost of the device, but may also affect the reliability and performance of the device.

2. **Advantages of strained - electron magnetic tunnel junction (s - MTJ)**:
- s - MTJ is a special nano - magnetic device, and its soft layer is composed of two - phase multiferroic materials, including a magnetostrictive layer and a piezoelectric layer.
- By using the interactions between these materials (such as shape anisotropy, strain anisotropy, dipole coupling field and spin - transfer torque), the function of a microwave oscillator can be achieved.

3. **Specific goals**:
- **Simplify circuit design**: Achieve the function of a microwave oscillator through a single s - MTJ and a passive resistor, reducing the number of required components.
- **Reduce cost and size**: Reduce the size and cost of the device while improving the reliability of the device.
- **Improve performance**: Theoretically, the quality factor (Q value) of this new - type oscillator exceeds 500, which is much higher than the quality factor of traditional microwave oscillators (usually less than 10), which makes it have higher radiation efficiency in antenna applications.

### Core innovation points of the paper:

- **Novel working principle**: The oscillation function is achieved through the feedback mechanism among strain, dipole coupling, shape anisotropy and spin - transfer torque generated by spin - polarized current.
- **Simulation and experimental verification**: The feasibility of this device is verified by numerical simulation, and its performance under different conditions is demonstrated, including its stability in the presence of thermal noise at room temperature.

### Summary:

The main purpose of the paper is to present a microwave oscillator design scheme based on a single strained - electron magnetic tunnel junction, aiming to replace the traditional complex combination of electronic components, so as to achieve a smaller, cheaper and more reliable microwave oscillator.