Enhancing the mechanical strength of - with alloying

Yuchao Yan,Cheng Li,Ning Xia,Tianqi Deng,Hui Zhang,Deren Yang
DOI: https://doi.org/10.1103/physrevapplied.21.064036
IF: 4.6
2024-06-15
Physical Review Applied
Abstract:β - Ga2O3 is a promising ultrawide-bandgap semiconductor material for power electronics and optical applications. However, its low hardness and cleavage nature pose major challenges to crystal growth and processing. In this study, Al alloying is proposed as an effective method to improve the mechanical properties of β - Ga2O3 as seed crystals and substrates. First-principle calculations are employed to assess the alloying-induced evolution of crystal structure and mechanical behavior. Elastic constants, ideal shear strengths, and ideal cleavage strengths are all shown to enhance with increasing Al concentration. Our analysis reveals the possibility of obtaining the mechanically favorable β - Ga2O3 seed crystals and substrates with proper Al alloying, providing theoretical guidance to the development of β - Ga2O3 materials and devices. 16 More Received 30 October 2023 Revised 10 April 2024 Accepted 22 May 2024 © 2024 American Physical Society Physics Subject Headings (PhySH) Research Areas Mechanical deformation Physical Systems Disordered alloysSemiconductor compounds Techniques Density functional theory Condensed Matter, Materials & Applied Physics
physics, applied
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