Abstract:Twistronics rooted in the twist operation towards bilayer van der Waals crystals is of both theoretical and technological importance. The realize of the correlated electronic behaviors under this operation encourages enormous effort to the research on magic-angle systems which possess sensitive response to the external field. Here, a giant dielectric difference between 30 plus or minus degree twist case is observed in a typical magnetic system 2H-VSe2 bilayer. It is shown that due to the structural inversion asymmetry in its monolayer, the different stacking of the two cases corresponds to the two kind of valley polarized states: interlayer ferrovalley and interlayer antiferrovalley. Further investigations reveal that such different dielectric response between the two states stems from the different Fermi wave vectors coupled to the electric field. More interestingly, we even obtain the selective circularly polarized optical absorption by tuning the interlayer twist. These findings open an appealing route toward functional 2D materials design for electric and optical devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: A huge dielectric difference is observed in bilayer chiral asymmetric materials (especially 2H - VSe₂) with a twist angle of 30± degrees. Specifically, by studying the valley - polarized states and dielectric responses under different stacking methods, the author reveals the origin of this huge dielectric difference and explores its potential applications. ### Main problems: 1. **Huge dielectric difference**: Why does the bilayer 2H - VSe₂ material show a significant dielectric difference in the case of a 30± - degree twist angle? 2. **Differences in valley - polarized states**: How do different stacking methods lead to two different valley - polarized states (i.e., the inter - layer ferrovalley state and the inter - layer antiferrovalley state)? 3. **Effect of an applied electric field**: How does an applied vertical electric field affect the dielectric responses of these two valley - polarized states? 4. **Selective circular - polarized optical absorption**: By adjusting the inter - layer twist angle, can selective circular - polarized light absorption be achieved? ### Specific background: - **Twistronics**: By performing a twisting operation on bilayer van der Waals crystals, the electronic behavior can be regulated, which is very important both theoretically and technically. - **Moire pattern**: Due to the misaligned stacking between layers, a long - period Moire pattern can be introduced into the bilayer system, thereby significantly changing the low - energy band structure. - **Valley polarization**: Due to the inversion symmetry of the single - layer structure, different stacking methods correspond to two valley - polarized states: the inter - layer ferrovalley state and the inter - layer antiferrovalley state. - **Dielectric response**: The differences in dielectric responses in different valley - polarized states originate from the different Fermi wave vectors coupled with the electric field. ### Research methods: - **First - principles calculations**: Through DFT (Density Functional Theory) calculations, study the electronic structures and dielectric properties at different twist angles. - **k·p model Hamiltonian**: Construct an effective k·p model Hamiltonian to analyze the changes in the energy band gap and their mechanisms. - **Experimental verification**: Combine experimental results to verify the theoretically predicted phenomenon of selective circular - polarized light absorption. ### Potential applications: - **2D material design**: By regulating the inter - layer twist angle, design functional 2D materials with specific electrical and optical properties. - **Spintronics and valleytronics devices**: Utilize the huge dielectric difference and the characteristic of selective circular - polarized light absorption to develop new spintronics and valleytronics devices. In summary, this paper aims to reveal the physical mechanism of the huge dielectric difference in the 30± - degree twisted bilayer 2H - VSe₂ material and explore its potential applications in functional devices.

Giant dielectric difference in chiral asymmetric bilayers

Emergent exotic chirality dependent dielectricity in magnetic twisted bilayer system

Selection rules of twistronic angles in two-dimensional material flakes via dislocation theory

Exotic Dielectric Behaviors Induced by Pseudo-Spin Texture in Magnetic Twisted Bilayer

Ultrahigh-Density Polar Vortex Lattice in Square-Shaped Moiré Bilayers of Lead Chalcogenides

Activating magnetoelectric optical properties by twisting antiferromagnetic bilayers

Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectrics

Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect

Spin-Chirality-Driven Multiferroicity in Van Der Waals Monolayers.

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers

Tunable magnetism in bilayer transition metal dichalcogenides

Giant chiral magnetoelectric oscillations in a van der Waals multiferroic

Polar and quasicrystal vortex observed in twisted-bilayer molybdenum disulfide

Giant chirality-induced spin polarization in twisted transition metal dichalcogenides

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Concepts of super-valley electron and twist induced quantum super-valley Hall effect

Piezoelectric networks and ferroelectric moiré superlattice domains in twistronic WS$_2$/MoS$_2$ and WSe$_2$/MoSe$_2$ bilayers

Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer

Excitonic density wave and spin-valley superfluid in bilayer transition metal dichalcogenide

Band energy landscapes in twisted homobilayers of transition metal dichalcogenides

Selection rules of twistronic angles in 2D material flakes via dislocation theory