Abstract:Magnetic skyrmions are prime candidates for future spintronic devices. However, incorporating them as an entity for information technology hinges on their interaction with defects ubiquitous to any device. Here we map from first-principles, the energy-profile of single skyrmions interacting with single-atom impurities, establishing a generic shape as function of the defect's electron filling. Depending on their chemical nature, foreign 3d and 4d transition metal adatoms or surface-implanted defects can either repel or pin skyrmions in PdFe/Ir(111) thin films, which we relate to the degree of filling of bonding and anti-bonding electronic states inherent to the proximity of the non-collinear magnetic structure. Similarities with key concepts of bond theories in catalysis and surface sciences imbue the universality of the shape of the interaction profile and the potential of predicting its interaction. The resulting fundamental understanding may give guidance for the design of devices with surface-implanted defects to generate and control skyrmions.
What problem does this paper attempt to address?
The core problem that this paper attempts to solve is to understand the interaction mechanism between magnetic skyrmions and single - atom defects. Specifically, the research aims to draw the energy distribution map between a single skyrmion and a single - atom impurity through first - principles calculations, and reveal the general characteristics of this interaction. This is helpful for designing and controlling skyrmion devices based on surface defects.
### Research Background
Magnetic skyrmions, due to their unique topological properties and potential application prospects, have become important candidates for future spintronic devices. However, in order to apply skyrmions to information technology, it is necessary to deeply understand their interactions with the defects commonly existing in materials. These defects can be single - atom impurities or surface - embedded defects, which will significantly affect the behavior of skyrmions, such as generation, stability, and movement.
### Main Problems
1. **Interaction between Skyrmions and Defects**: Study the influence of 3d and 4d transition metal atoms with different chemical properties as single - atom impurities on skyrmions in PdFe/Ir(111) thin films.
2. **Energy Distribution Map**: Draw the energy distribution map of the interaction between skyrmions and single - atom impurities, and determine the attractive or repulsive nature of the interaction.
3. **Universality**: Reveal the general shape of this interaction and its relationship with the electron - filling state of defects, thereby providing guidance for predicting and designing skyrmion devices with specific functions.
### Method
The researchers used density functional theory (DFT) combined with the Korringa - Kohn - Rostoker (KKR) Green's function method for first - principles calculations to simulate the interaction between skyrmions and single - atom defects. By analyzing the influence of defects at different positions and of different types on the energy of skyrmions, a detailed energy distribution map was obtained.
### Results
1. **Interaction Characteristics**: It was found that impurities in the 3d series usually repel skyrmions, while impurities in the 4d series tend to fix skyrmions. Exceptions include Sc, Mn, and Cu - inatom, which can attract skyrmions; Rh - inatom is inert.
2. **Energy Distribution Characteristics**: The energy distribution map shows a typical band - filling effect, and with the change of atomic number, it shows an M - shaped double - peak feature. This feature is similar to the trend of the adhesion energy or surface energy of transition metals, indicating its universality.
3. **Electron Structure Mechanism**: By analyzing the local density of states (LDOS), the specific electron mechanisms of the interaction between different defects and skyrmions were explained. For example, V - inatom will repel skyrmions due to its strong exchange splitting and hybridization effects, while Tc - inatom will fix skyrmions due to its weaker exchange splitting and additional hybridization channels.
### Significance
This research not only deepens the understanding of the interaction between skyrmions and defects, but also provides a theoretical basis for designing skyrmion devices with specific functions. By reasonably arranging the position and type of defects, a "highway" for skyrmion transmission can be constructed to achieve precise control and efficient utilization of skyrmions.
In conclusion, through systematic first - principles research, this paper reveals the general laws of the interaction between skyrmions and single - atom defects, laying the foundation for further developing new information storage and processing technologies based on skyrmions.