Antiferromagnetic Single-layer Spin-Orbit Torque Oscillators

Roberto E. Troncoso,Karsten Rode,Plamen Stamenov,J. Michael D. Coey,Arne Brataas

DOI: https://doi.org/10.1103/PhysRevB.99.054433

2019-01-24

Abstract:We show how a charge current through a single antiferromagnetic layer can excite and control self-oscillations. Sustained oscillations with tunable amplitudes and frequencies are possible in a variety of geometries using certain classes of non-centrosymmetric materials that exhibit finite dissipative spin-orbit torque. We compute the steady-state phase diagram as a function of the current and spin-orbit torque magnitude. The anisotropic magnetoresistance causes the conversion of the resulting AF oscillations to a terahertz AC output voltage. These findings provide an attractive and novel route to design terahertz antiferromagnetic spin-orbit torque oscillators in simple single-layer structures.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to control the self - oscillation phenomenon by current in single - layer antiferromagnetic materials. Specifically, the researchers hope to show how to excite and control self - oscillation by the charge current in a single antiferromagnetic layer. These self - oscillations have adjustable amplitudes and frequencies and can be achieved in various geometric structures using certain non - centrosymmetric materials, which exhibit a finite dissipative spin - orbit torque. In addition, due to the anisotropic magnetoresistance effect, the antiferromagnetic oscillation can be converted into a terahertz AC output voltage. This finding provides a new way to design terahertz antiferromagnetic spin - orbit torque oscillators in a simple single - layer structure.

The main goal of the paper is to use the Spin - Orbit Torque (SOT) to achieve stable self - oscillations in the terahertz frequency range in antiferromagnetic materials, thereby filling the "terahertz gap", that is, the frequency band (between microwaves and infrared light) that is difficult to generate and detect with existing technologies. Through this method, highly efficient, inexpensive, and chip - sized miniaturized terahertz technologies can be developed, which is of great significance for future communication and sensing technologies.