SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits

Samuel Ng,Jacob Retallick,Hsi Nien Chiu,Robert Lupoiu,Mohammad Rashidi,Wyatt Vine,Thomas Dienel,Lucian Livadaru,Robert A. Wolkow,Konrad Walus
DOI: https://doi.org/10.1109/TNANO.2020.2966162
2018-08-15
Abstract:This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational logic. Several simulation tools are included, each able to inform the designer on various aspects of their designs: a ground-state electron configuration finder, a non-equilibrium electron dynamics simulator, and an electric potential landscape solver with clocking electrode support. Simulations have been compared against past experimental results to inform the electron population estimation and dynamic behavior. New logic gates suitable for this platform have been designed and simulated, and a clocked wire has been demonstrated. This work paves the way for the exploration of the vast and fertile design space of atomic silicon dangling bond quantum dot circuits.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to develop a computer - aided design (CAD) tool to support the design and simulation of atomic - level silicon dangling - bond (Si - DBs) quantum - dot circuits. Specifically, the researchers hope: 1. **Provide an efficient design and simulation environment**: By developing the SiQAD tool, enable researchers to quickly design and simulate Si - DB - based quantum - dot patterns that can implement computational logic. 2. **Verify the design of new logic gates**: By simulating new logic gates (such as AND, XOR, NAND, NOR, etc.), ensure that they can work correctly at the atomic scale and explore their dynamic behaviors. 3. **Understand the behavior of Si - DB circuits**: Through three different simulation tools (SimAnneal, HoppingDynamics, PoisSolver), understand and predict the behavior of Si - DB circuits from the perspectives of static electron configuration, non - equilibrium electron dynamics, and electric potential distribution respectively. 4. **Promote the development of nano - scale logic circuits**: Use Si - DB technology to construct nano - scale logic circuits, thereby providing new solutions for circuit miniaturization and power consumption reduction. 5. **Facilitate community cooperation and tool improvement**: Release the source code of SiQAD in an open - source manner, and encourage more researchers to participate in and jointly improve and develop this platform. ### Specific problem description The specific problems mentioned in the paper include: - How to precisely create and erase hydrogen - passivated silicon dangling bonds on the Si(100) surface. - How to accurately predict the electron configuration and its dynamic behavior in the Si - DB mode through simulation tools. - How to design and verify new logic gate structures so that they can perform reliable logic operations at the atomic scale. - How to control the state change of Si - DB through electrodes, thereby achieving information transfer and logic operations. By solving these problems, SiQAD aims to lay a solid foundation for the future research and application of atomic - level silicon dangling - bond quantum - dot circuits.