Josephson effect in silicene-based SNS Josephson junction: Andreev reflection and free energy

Chen-Huan Wu
DOI: https://doi.org/10.48550/arXiv.1806.10289
2018-06-27
Abstract:We investigate the Josephson effcet in superconductor-normal-superconductor junction (SNS) base on the doped unbiased silicene under the perpendicular electric field and off-resonance circularly polarized light. The Andreev reflection (including the retroreflection and specular one) during the subgap transport, the free energy, and the reversal of the Josephson effect as well as the emergence of $\phi_{0}$-junction are exploited. The Andreev reflection is complete in the NS interface even for the clean interface and without the Fermi wave vector mismatch, which is opposite to the case of ferromagnet-superconductor interface. The important role played by the dynamical polarization of the degrees of freedom to the $0-\pi$ transition and the generation of $\phi_{0}$-junction are mentioned in this paper. The scattering by the charged impurity in the substrate affects the transport properties in the bulk as well as the valley relaxation, which can be taken into consider by the macroscopic wave function. In short junction limit, the approximated results about the Andreev level and free energy are also discussed. Beside the low-energy limit of the tight-binding model, the finite-size effect need to be taken into account as long as the spacing model is much larger than the superconducting gap.
Mesoscale and Nanoscale Physics,Superconductivity
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: to study the Josephson effect in silicene - based superconducting - normal - superconducting (SNS) Josephson junctions, especially under the application of a vertical electric field and non - resonant circularly polarized light. Specifically, the author focuses on the following aspects: 1. **Andreev Reflection**: - Study the Andreev reflection (including back - reflection and specular reflection) that occurs during sub - gap transmission, and explore its behavior under different conditions. 2. **Free Energy and Josephson Effect Reversal**: - Explore the change in free energy and the reversal phenomenon of the Josephson effect, especially the generation mechanisms of 0 - π transitions and φ0 junctions. 3. **Role of Dynamic Polarization**: - Analyze the influence of dynamic polarization on degrees of freedom (such as spin, valley degrees of freedom, etc.), and its important role in 0 - π transitions and φ0 junction generation. 4. **Scattering Effects**: - Study the influence of charged impurity scattering in the substrate on the transmission characteristics, including the scattering effects of bulk states and valley relaxation. 5. **Approximate Results in the Short - Junction Limit**: - Discuss the approximate results of Andreev energy levels and free energy in the short - junction limit. Through these studies, the author aims to reveal the unique properties and potential applications of the Josephson effect in silicene - based SNS Josephson junctions under specific conditions (such as the application of an electric field and circularly polarized light). ### Key Formulas 1. **Tight - Binding Hamiltonian**: \[ H=\hbar v_F(\eta\tau_x k_x+\tau_y k_y)+\eta\lambda_{\text{SOC}}\tau_z\sigma_z + a\lambda_R^2\eta\tau_z(k_y\sigma_x - k_x\sigma_y)-\frac{\Delta}{2}E_\perp\tau_z+\frac{\lambda_R^1}{2}(\eta\sigma_y\tau_x-\sigma_x\tau_y)+M_s s_z + M_c \] 2. **Quasiparticle Energy Spectrum**: \[ \varepsilon_n=\sqrt{\left(\sqrt{\hbar^2 v_F^2 k^2+(m_{\eta\sigma_z\tau_z Dn})^2}+s\mu_n\right)^2} \] 3. **Andreev Reflection Coefficient**: \[ r_h=\frac{e^{i(\eta\theta_n-\phi)}k_F\cos\theta_n}{ik_F\sin\beta\cos\theta_n+\varepsilon_n\cos\beta} \] 4. **Andreev Bound - State Energy**: \[ \varepsilon_A = s\Delta_s\sqrt{2\sqrt{1 - A(C - \cos\phi)+s_z\sqrt{B^2[A^2 + B^2-(C - \cos\phi)^2]}}}/(A^2 + B^2) \] 5. **Free Energy**: \[ E(\phi, T)=-k_B T\sum_{\eta s_z\tau_z}\int_{-\pi/2}^{\pi/2}D\ln[2\cosh(\varepsilon_A/2k_B T)]\cos\theta_n d\theta_n \] Through these formulas, the author describes in detail the physical behaviors and characteristics of silicene - based SNS Josephson junctions under different conditions.