A Si-memristor electronically and uniformly switched by a constant voltage

Yang Lu,I-Wei Chen

DOI: https://doi.org/10.1038/s41928-019-0204-7

2018-06-12

Abstract:Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect for nanoelectronic applications. Voltage-regulated nanoscale conductivity is already utilized in metal-insulator-metal devices known as memristors. But typically their tunable conductivity does not come from electrons but from migrating ions within a stoichastically formed filament, and as such their combined resistor-memory performance suffers. Here we demonstrate amorphous-silicon-based memristors can have coherent electron wave functions extending to the full device thickness, exceeding 15 nm. Remarkably, despite the large aspect ratio and very thin thickness of the device, its electrons still follow an isotropic, three-dimensional pathway, thus providing uniform conductivity at the nanometer scale. Such pathways in amorphous insulators are derived from overlapping gap states and regulated by trapped charge, which is stabilized by electron-lattice interaction; this makes the memristor exhibit pressure-triggered insulator$\rightarrow$metal transitions. Fast, uniform, durable, low-power and purely electronic memristors with none of the shortcomings of ion-migrating memristors have been fabricated from a variety of amorphous silicon compositions and can be readily integrated into silicon technology. Therefore, amorphous silicon may provide the ideal platform for building proximal memories, transistors and beyond.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the limitations of traditional memristors in performance and integration, especially the problems faced by memristors based on ion - migration mechanisms. Specifically:

1. **Limitations of traditional memristors**:
- **Performance issues**: Traditional memristors usually rely on ion migration to change the resistance state. This mechanism leads to unstable device performance, with intrinsic switching/performance variability, and low yield.
- **Difficulty in integration**: The complex chemical composition of non - silicon - based materials makes these memristors difficult to integrate with existing silicon technology, especially when constructing high - density three - dimensional memory arrays.
- **Harsh operating conditions**: Some memristors need to operate in a reducing atmosphere, which limits their application scenarios.

2. **Research objectives**:
- **Develop new memristors**: The paper aims to develop a new type of memristor based on amorphous silicon. This memristor has the characteristics of uniformity, fast speed, low power consumption, durability, and being fully electronic, avoiding the problems brought by ion migration.
- **Achieve high - performance storage**: By optimizing the material composition and structure, the memristor can provide a uniform conduction path on the nanoscale and achieve stable high - low resistance state switching, thus meeting the needs of next - generation silicon - based memories.
- **Easy to integrate**: Ensure that the newly developed memristor can be easily integrated into existing silicon technology, providing an ideal platform for constructing near - neighbor memories, transistors, etc.

3. **Specific solutions**:
- **Selection of amorphous silicon materials**: Utilize the special properties of amorphous silicon, such as its electronic wave function can expand to the entire device thickness under certain conditions, thereby achieving a uniform conduction path.
- **Doping modification**: Through oxygen (O) and nitrogen (N) doping, adjust the bandgap of amorphous silicon, enhance the ability of electron capture and release, and thus achieve a controllable resistance state switching.
- **Purely electronic mechanism**: Ensure that the switching mechanism of the memristor is completely driven by electronic behavior, rather than relying on ion migration or chemical reactions, thereby improving the stability and reliability of the device.

In summary, this paper attempts to solve the deficiencies of traditional memristors in performance and integration by developing a new type of memristor based on amorphous silicon, providing a better solution for next - generation silicon - based memories.