Abstract:We investigate theoretically the Goos-Hänchen (GH) shift of a p-polarized terahertz beam incident on a 2D material surface with complex conductivity. Taking monolayer graphene to be the model material, we determine the dependence of GH shifts on the Fermi level and incident frequency. Both spatial and angular GH shifts are present. For both GH shifts in general, we find that increasing the Fermi level shifts the incident angle at which the maximum GH shifts arise. Moreover, we see that at higher frequencies, the amount of beam shift decreases with the Fermi level when the incident frequency is changed. At lower frequencies, however, the shift becomes proportional with the Fermi level. Upon obtaining the measurable shifts, the angular GH shift dominates the spatial GH shift given appropriate experimental parameters. Our results may pave the way for these material's use in optoelectronics devices, and fundamentally, to determine properties of 2D materials with complex conductivity.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the characteristics of the Goos - Hänchen (GH) shift caused by the complex conductivity of two - dimensional materials (taking graphene as an example) in the terahertz band. Specifically, the author explores the relationship between the GH shift and the Fermi level and the incident frequency of graphene through theoretical analysis. The main objectives of the paper are: 1. **Determine the relationship between the GH shift and material parameters**: Study the GH shift when a p - polarized terahertz beam is reflected on the surface of a two - dimensional material with complex conductivity, especially how these shifts depend on the Fermi level and the incident frequency. 2. **Optimize experimental parameters**: By adjusting the Fermi level and the incident frequency, find the best experimental conditions that can maximize the GH shift, thereby providing a new method for measuring material properties. 3. **Explore application prospects**: The research results can be used to develop new optoelectronic devices and provide a theoretical basis for the regulation of the optical and electronic properties of two - dimensional materials. ### Main findings - **Influence of the Fermi level**: Increasing the Fermi level will cause the maximum value of the GH shift to appear at a larger incident angle. In addition, at higher frequencies, as the incident frequency changes, the amount of shift will decrease with the increase of the Fermi level; while at lower frequencies, the amount of shift is proportional to the Fermi level. - **Dominant role of the angular GH shift**: Under appropriate experimental parameters, the angular GH shift is more significant than the spatial GH shift and is easier to measure. - **Frequency dependence**: Under low Fermi levels and high incident frequencies, or high Fermi levels and low incident frequencies, a large spatial GH shift can be observed. ### Formulas - **Complex conductivity**: \[ \sigma(\omega) = \frac{2e^2 k_B T}{\pi \hbar^2 i} \left( \frac{\omega + i\tau^{-1}}{\log \left[ 2 \cosh \left( \frac{E_F}{2k_B T} \right) \right]} \right) + \frac{e^2}{4\hbar^2} \left[ H\left( \frac{\omega}{2} \right) + \frac{4i\omega}{\pi} \int_0^\infty d\epsilon \frac{H(\epsilon) - H\left( \frac{\omega}{2} \right)}{\omega^2 - 4\epsilon^2} \right] \] - **Fresnel coefficients**: \[ r_s = \frac{\sqrt{\epsilon_1} \cos \theta_1 - \sqrt{\epsilon_2} \cos \theta_2 - \tilde{\sigma}}{\sqrt{\epsilon_1} \cos \theta_1 + \sqrt{\epsilon_2} \cos \theta_2 + \tilde{\sigma}}, \quad r_p = \frac{\sqrt{\epsilon_2} \cos \theta_2 - \sqrt{\epsilon_1} \cos \theta_1 + \tilde{\sigma}}{\sqrt{\epsilon_1} \cos \theta_1 + \sqrt{\epsilon_2} \cos \theta_2 + \tilde{\sigma}} \] - **GH shift**: \[ \Delta_{GH} = w_p \operatorname{Im} \left( \frac{\partial \ln r_p}{\partial \theta} \right) + w_s \operatorname{Im} \left( \frac{\partial \ln r_s}{\partial \theta} \right)

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