Giant Gate-Tunability of Complex Refractive Index in Semiconducting Carbon Nanotubes
Baokun Song,Fang Liu,Haonan Wang,Jinshui Miao,Yueli Chen,Pawan Kumar,Huiqin Zhang,Xiwen Liu,Honggang Gu,Eric A. Stach,Xuelei Liang,Shiyuan Liu,Zahra Fakhraai,Deep Jariwala
DOI: https://doi.org/10.1021/acsphotonics.0c01220
IF: 7
2020-09-23
ACS Photonics
Abstract:Electrically tunable optical properties in materials are desirable for many applications ranging from displays to lasing and optical communication. In most two-dimensional thin films and other quantum-confined materials, these constants have been measured accurately. However, the optical constants of single-walled carbon nanotubes (SWCNTs) as a function of electrostatic tuning are yet to be measured due to a lack of electronic purity and spatial homogeneity over large areas. Here, we measure the basic optical constants of ultrathin high-purity (>99%) semiconducting single wall carbon nanotube (s-SWCNT) films with spectroscopic ellipsometry. We extract the gate-tunable complex refractive index of s-SWCNT films and observe a giant modulation of the real refractive index (∼11.2% or an absolute value of >0.2) and extinction coefficient (∼11.6%) in the near-infrared (IR) region (1.3–1.55 μm) induced by the applied electric field significantly higher than all existing electro-optic semiconductors in this wavelength range. We further design a multilayer IR reflection phase modulator stack by combining s-SWCNT and monolayer MoS<sub>2</sub> heterostructures that can attain >45° reflection phase modulation at 1600 nm wavelength for <200 nm total stack thickness. Our results highlight s-SWCNTs as a promising material system for infrared photonics and electro-optics in telecommunication applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsphotonics.0c01220?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsphotonics.0c01220</a>.Raman analysis of s-SWCNT film; Spectroscopic Ellipsometry of s-SWCNT specimen; Complex refractive indices of Arc discharge and HiPco s-SWCNT films; Gate-tunable ellipsometry spectra of s-SWCNT film; Optimization results of (1L-MoS<sub>2</sub>/SWCNT)<sub>5</sub>/MoS<sub>2</sub>/Au near-IR gate-tunable reflection phase modulator; Optimization results of (1L-MoS<sub>2</sub>/SWCNT)<sub>5</sub>/MoS<sub>2</sub>/Au near-IR absorber; Tabulated Δ<i>n</i> and Δκ of s-SWCNT, some traditional semiconductors, and QW structures (<a class="ext-link" href="/doi/suppl/10.1021/acsphotonics.0c01220/suppl_file/ph0c01220_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology