Thermoelectricity in correlated narrow-gap semiconductors

Jan M. Tomczak

DOI: https://doi.org/10.1088/1361-648X/aab284

2018-02-21

Abstract:We review many-body effects, their microscopic origin, as well as their impact onto thermoelectricity in correlated narrow-gap semiconductors. Members of this class---such as FeSi and FeSb$_2$---display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie-Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators---such as Ce$_3$Bi$_4$Pt$_3$ for which we present new results---and propose a general classification of paramagnetic insulators. From the latter FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we advert to new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.

Strongly Correlated Electrons,Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the many - body effects in **relevant narrow - band semiconductors** and their influence on thermoelectric properties. Specifically:

1. **Many - body effects and their microscopic origins**: The paper explores how the strong interactions between electrons in these materials affect their physical properties, especially thermoelectric properties. These effects include energy - gap changes caused by electron correlations, changes in resistivity with temperature, changes in magnetic response, etc.

2. **Optimization of thermoelectric properties**: The paper discusses how to optimize the thermoelectric properties of these materials by understanding the electron - correlation effects. In particular, at low temperatures, these materials exhibit an abnormally large thermopower, which makes them potentially valuable in low - temperature thermoelectric applications.

3. **Material classification and comparison**: The paper conducts a detailed classification and comparison of different types of materials, especially two typical materials, **FeSi** and **Ce₃Bi₄Pt₃**. These two materials show similarities in some physical properties, but the microscopic mechanisms behind them are different. FeSi is classified as an orbitally - selective Kondo insulator, while Ce₃Bi₄Pt₃ is a typical Kondo insulator.

4. **Theoretical models and experimental verification**: The paper reviews multiple theoretical models, such as the Periodic Anderson Model (PAM) and the Hubbard model, which are used to explain and predict the electronic structures and transport properties of relevant narrow - band semiconductors. At the same time, the paper also presents the latest experimental results to verify the effectiveness of these theoretical models.

5. **Electron - lattice interactions**: The paper also explores the influence of electron - lattice interactions on the electronic structures of these materials, especially the influence of the phonon - drag effect on thermoelectric properties.

In conclusion, this paper aims to reveal the unique physical properties of these materials and explore their potential in thermoelectric applications by in - depth study of the many - body effects in relevant narrow - band semiconductors.