I-V Characteristics of Graphene Nanoribbon/h-BN Heterojunctions and Resonant Tunneling

Taiga Wakai,Shoichi Sakamoto,Mitsuyoshi Tomiya

DOI: https://doi.org/10.1088/1361-648X/aac59d

2018-02-14

Abstract:We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction(GS/h-BN) and 11-armchair graphene nanoribbon heterojunction(11-AGNR/h-BN), which were carried out using the density functional theory(DFT) method and the non-equilibrium Green's function(NEGF) technique. Since 11-AGNR belongs to the conductive (3n-1)-family of AGNR, both are metallic nanomaterials with two transverse arrays of h-BN, which is a wide-gap semi-conductor. The two h-BN arrays act as double barriers. The transmission functions(TF) and I-V characteristics of GS/h-BN and 11-AGNR/h-BN are calculated by DFT and NEGF, and they show that quantum double barrier tunneling occurs. The TF becomes very spiky in both materials, and it leads to step-wise I-V characteristics rather than negative resistance, which is the typical behavior of double barriers in semiconductors.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the electrical properties of graphene sheets (GS) and hexagonal boron nitride (h - BN) heterojunctions as well as 11 - armchair - type graphene nanoribbons (11 - AGNR) and h - BN heterojunctions, especially the quantum tunneling phenomenon in these structures. Specifically, the author hopes to explore the following aspects through first - principles calculations of density functional theory (DFT) and non - equilibrium Green's function (NEGF) techniques:

1. **Electrical properties of graphene sheets and h - BN heterojunctions**:
- Study the change in conductivity of the heterojunction formed after a single h - BN array is embedded in a graphene sheet.
- Explore the transmission characteristics of the double - barrier structure formed after two h - BN arrays are embedded in a graphene sheet.

2. **Electrical properties of 11 - AGNR and h - BN heterojunctions**:
- Study the transmission characteristics and I - V characteristics of 11 - AGNR after being embedded in two h - BN arrays.
- Compare the transmission function (TF) and I - V characteristics of the 11 - AGNR/h - BN double - barrier system with those of the graphene sheet/h - BN double - barrier system.

3. **Resonant tunneling phenomenon**:
- Verify whether there is a resonant tunneling phenomenon by calculating the transmission function and I - V characteristics.
- Analyze the relationship between the sharp peak of the transmission function and the energy gap and explain the physical mechanism behind it.

4. **Controlling electronic properties**:
- Explore the possibility of regulating the electronic properties of graphene sheets and nanoribbons by changing the distance between h - BN arrays.
- Study how to use this regulation to achieve specific electrical behaviors, such as the adjustment of the threshold voltage.

Through the above research, the author hopes to reveal the unique electrical properties of graphene and h - BN heterojunctions and provide a theoretical basis for the future design of nano - devices based on these materials.

### Formula summary

The main formulas involved in the paper include:

- **Landauer formula**: Used to calculate the current \( I \):
\[
I=\frac{2e}{h}\int T(E)[f_L(E) - f_R(E)]dE
\]
where \( f(E) \) is the Fermi - Dirac distribution function, \( E_F \) is the Fermi level, \( V \) is the applied bias voltage, and \( e \) is the elementary charge.

- **Dirac equation**: Used to describe the electron behavior in a one - dimensional model:
\[
(v_F\sigma_xp_x + m\beta+V(x)-E)\Phi(x)=0
\]
where \( p_x = \frac{\hbar}{i}\frac{d}{dx} \), and the matrices \( \sigma_x \) and \( \beta \) are defined as:
\[
\sigma_x=\begin{pmatrix}0&1\\1&0\end{pmatrix},\quad\beta=\begin{pmatrix}1&0\\0& - 1\end{pmatrix}
\]

These formulas help to explain the transmission function and I - V characteristics in the experimental results and provide theoretical support.