Density and $T_1$ of surface and bulk spins in diamond in high magnetic field gradients

Martin de Wit,Gesa Welker,Marc de Voogd,Tjerk Oosterkamp
DOI: https://doi.org/10.1103/PhysRevApplied.10.064045
2018-01-23
Abstract:We report on surface and bulk spin density measurements of diamond, using ultra-sensitive magnetic force microscopy with magnetic field gradients up to 0.5 T/$\mu$m. At temperatures between 25 and 800 mK, we measure the shifts in the resonance frequency and quality factor of a cantilever with a micromagnet attached to it. A recently developed theoretical analysis allows us to extract a surface spin density of 0.072 spins/nm$^2$ and a bulk spin density of 0.4 ppm from this data. In addition, we find an increase of the $T_1$ time of the surface spins in high magnetic field gradients due to the suppression of spin diffusion. Our technique is applicable to a variety of samples other than diamond, and could be of interest for several research fields where surface, interface or impurity bulk spin densities are an important factor.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to measure and understand the impurity spin density on and within the diamond surface and its behavior under high magnetic field gradients. Specifically, the authors used the ultrasensitive magnetic force microscopy (MFM) technique to measure the spin density of nitrogen impurities in diamond samples at extremely low - temperature conditions (25 to 800 mK) and studied the changes in the relaxation time \(T_1\) of these spins under high magnetic field gradients. ### Main problems: 1. **Measuring the spin density on and within the surface**: Determining the impurity spin density on and within the diamond surface through experiments is crucial for understanding the decoherence mechanism of NV centers in diamond. 2. **Studying the influence of high magnetic field gradients on the \(T_1\) relaxation time**: Exploring how high magnetic field gradients suppress spin diffusion and thus affect the \(T_1\) relaxation time of spins. ### Background and motivation: - **The decoherence problem of NV centers**: NV centers (nitrogen - vacancy centers) in diamond experience decoherence due to interactions with impurity spins on or within the surface, especially for shallow NV centers near the surface, where this effect is more significant. - **The advantages of low temperature and high magnetic field gradients**: Conducting experiments at extremely low temperatures allows the influence of phonon processes to be ignored, and high magnetic field gradients can better manipulate and detect sparse spin systems. ### Experimental methods: - **Experimental setup**: A super - soft cantilever with micro - magnets was used to scan diamond samples at different heights to measure the changes in the resonance frequency and quality factor of the cantilever. - **Theoretical analysis**: By considering the magnetic dipole interaction between spins and the cantilever and combining the Lagrangian method, the frequency shift and the change in the quality factor were calculated. ### Key results: - **Spin density measurement**: The spin density on the diamond surface was measured to be \(0.072 \, \text{spins/nm}^2\), and the spin density within the diamond was \(0.4 \, \text{ppm}\). - **Changes in the relaxation time \(T_1\)**: It was found that high magnetic field gradients can suppress spin diffusion, resulting in an increase in the \(T_1\) time of surface spins. ### Application prospects: This technique is not only applicable to diamond samples but can also be extended to the study of other materials, especially in fields such as quantum computing devices and magnetic resonance force microscopy (MRFM), where the impurity spin density on and within the surface is an important factor. In summary, this paper aims to deeply understand the properties of spin systems in diamond through high - precision experiments and technical means, providing theoretical basis and technical support for improving the performance of diamond - based nano - devices.