Abstract:The world of photon science experiences significant advancements since the advent of synchrotron light sources with unprecedented brilliance, intensity and pulse repetition rates, with large implications on the detectors used for instrumentation. Here, an overview about the work on this field carried out at the semiconductor laboratory of the Max-Planck-Society (MPG HLL) is given. Main challenges are high dynamic range to resolve faint features at the fringes of scatter images as well as structures in bright peaks, and high bandwidth to fully exploit the fast timing capability of the source. A newly developed device to improve the signal-to-noise-ratio (SNR) at high bandwidths is the so-called MARTHA (Monolithic Array of Reach-Through Avalanche Photodiodes) structure, which integrates an array of APDs on a monolithic substrate. The reach-through architecture assures near 100% fill factor and allows implementing a thin entrance window with optimized quantum efficiency for low energy X-rays. The structures operate in proportional mode with adjustable gain, and can serve as a drop-in replacement for PAD detectors in hybrid pixel systems. A more sophisticated solution for low to medium frame rate applications with high contrast requirement are pnCCDs with high dynamic range in the pixel area featuring DEPFET based readout nodes with non-linear amplification (NLA). The high dynamic range mode has been demonstrated for pnCCD devices with a pixel size down to 75 μm 2 . Framerates of up to 1 kHz are possible for a 1 Megapixel detector. Small size prototypes of these structures have recently been manufactured. Modified DEPFET structures with build-in non-linear amplification are also used to implement active pixel detectors optimized for high dynamic range. Successfully prototyped for the DSSC sensors (DEPFET Sensor with Signal Compression) at the XFEL, these structures are increasingly being used in applications requiring high contrast and intensity, e.g., TEM imaging. Charge handling capability and output characteristics can be tailored to the requirements, as well as pixel geometry and size. The large intrinsic gain of the DEPFET provides excellent SNR even at fast timing. Pixels can be read with a speed of 100 ns, the resulting frame rate depends on the degree of readout parallelization.

High rate tests of the photon detection system for the LHCb RICH Upgrade

Photodetectors and front-end electronics for the LHCb RICH upgrade

Testbeam analysis of biasing structures for irradiated hybrid pixel detectors

On-beam system test of the new readout electronics for the CMS Electromagnetic Calorimeter upgrade

Mighty Tracker -- Performance Studies of the MightyPix for LHCb

Test beam results of irradiated modules for the CMS Phase-2 upgrade equipped with HPK planar pixel sensors and RD53B-CMS readout chips

The upgrade of the CMS electromagnetic calorimeter for HL-LHC

Lifetime and performance of the very latest microchannel-plate photomultipliers

Long term aging studies of the new PMTs used for the HL-LHC ATLAS hadron calorimeter upgrade

A photomultiplier tube test stand and on-site measurements to characterise the performance of Photonis XP3062 photomultiplier tubes at increased background light conditions and lower gain

Radiation hardness and quality validation of the on-detector electronics for the CMS Drift Tubes upgrade

The LHCb upgrade I

Latest feasibility studies of LAPPD as a timing layer for the LHCb Upgrade 2 ECAL

Performance of the LHCb RICH detector at the LHC

Performances and ageing study of resistive-anodes Micromegas detectors for HL-LHC environment

Novel sensor developments for photon science at the MPG semiconductor laboratory

MightyPix at the LHCb Mighty Tracker — verification of an HV-CMOS pixel chip's digital readout

Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

The LHCb VELO Upgrade II: Design and development of the readout electronics

Threshold bounce -- occupancy-dependent modulation of the discriminating threshold in silicon detectors