Piezoelectric nanogenerators with high performance against harsh conditions based on tunable N doped 4H-SiC nanowire arrays

Linlin Zhou,Tao Yang,Laipan Zhu,Weijun Li,Shuize Wang,Xinmei Hou,Xinping Mao,Zhong Lin Wang
DOI: https://doi.org/10.1016/j.nanoen.2021.105826
IF: 17.6
2021-05-01
Nano Energy
Abstract:<p>Piezoelectric nanogenerators (PENGs) have been attracting much attention for their high flexibility, low density and outstanding chemical stability in applications of environmental energy harvesting and self-powered sensors. Here, PENGs based on large scale free-standing N doped 4H-SiC nanowire arrays (NWAs) fabricated by anodic oxidation of single-crystalline N doped 4H-SiC wafer are proposed for the first time. Due to N-dopants bring the SiC semiconductors an enhanced piezoelectric performance, the as-prepared PENGs show excellent performance with the peak values of open circuit voltage and short circuit current density of 3.0 V and 200 nA cm<sup>−2</sup>, respectively. Service stability of PENGs has been proven by 20,000 consecutive charge-discharge cycles as well. Moreover, the PENGs exhibit high thermal stability against 200 °C and excellent acid-base resistance. The energy generated by PENGs is enough to charge capacitors through a full bridge rectifier without any external power supply, certifying that they can work as standalone nanoscale energy sources. These results innovatively expand the feasibility of 4H-SiC for application in a wide variety of high-performance energy harvesting devices.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
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