Optical, structural, electrical, and morphological properties of (Ga:B) co-doped CdS thin films

Ahmad, Ahmad A.

DOI: https://doi.org/10.1007/s10854-024-13500-9

2024-09-17

Journal of Materials Science Materials in Electronics

Abstract:Gallium and Boron co-doped Cadmium Sulfides (CdS) films were prepared using the sol–gel technique. CdS and CdS/Ga:B with various concentration films were prepared on a glass substrate by immersing it in the proper aqueous solutions for 2 h and annealing at 450 °C for 2 h. The transmittance spectra acquired a blue-shifting by adding Ga and/or B. Adding only gallium reveals the most blue-shifting, indicating an increase in the film's band edge. Moreover, other optical properties were investigated in detail, such as extinction coefficient k , Index of refraction n , and bandgap energy ( E g ). The bandgap energy ( E g ) has been investigated via the Tauc model. E g for the un-doped CdS is around 2.36 eV, while it increases by introducing Ga and/or B for all other samples except for CdS/Ga:B (0.25:0.75)%. The X-ray spectra show a hexagonal structure for all films. The crystalline size for the un-doped CdS thin film is 11.19 nm. However, it decreases with CdS/Ga 1% and CdS/B 1% to be 8.23 nm 7.79 nm, respectively. However, other structural properties were investigated in detail, such as Microstrain ε , Dislocation density δ , and Crystallite density N . The average electrical conductivity of CdS is 5.61 μS/cm, which decreases by adding Ga and/or B, reaching a minimum value (0.81 μS/cm) for CdS/Ga:B (0.50:0.50)%. SEM image for un-doped CdS film was demonstrated accumulated individual crystals with an average size between 80 and 120 nm in isolated islands.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied