Strain-induced spin-gapless semiconductors and pure thermal spin-current in magnetic black arsenic-phosphorus monolayer

Xingyi Tan,Yan Sun,Hui Liang,Qiuju Li,Xuefeng Sun,Yu-Tian Ji,Xiao-Yu Yue,Yi-Yan Wang,Dan-Dan Wu
DOI: https://doi.org/10.1039/d2cp01108e
IF: 3.3
2022-05-14
Physical Chemistry Chemical Physics
Abstract:Spin-gapless semiconductor (SGS) materials are regarded as the most promising candidates for ideal massless and dissipationless states towards low-power spintronics device application. Here, we propose a spin-gapless semiconducting black arsenic-phosphorus (AsP) monolayer halogenated by chlorine (Cl) adatoms, and reveal the perfect spin Seebeck effect induced by its SGS characters to produce a pure thermal spin-current using the first-principle calculations. Our results show that Cl atoms prefer to adsorb P atoms rather than As atoms in AsP monolayer, behaving a ferromagnetic semiconductor character. As-adsorbed AsP monolayer as an ideal SGS material with parabolic-type energy dispersion, can be utilized to realize the symmetrical spin Seebeck current for perfect pure thermal spin-current even at an extremely low on-off temperature. And the in-plane strain engineering can effectively manipulate the electronic structures of P-absorbed AsP monolayer for the perfect parabolic-type SGS similar to that of As-adsorbed AsP, and to obtain the relevant thermoelectric effects. These distinct features suggest the potential applications of the Cl-halogenated AsP monolayer with the SGS characters in low-power spin-caloritronic devices.
chemistry, physical,physics, atomic, molecular & chemical
What problem does this paper attempt to address?