Band structure of Cd$_3$As$_2$ from Shubnikov - de Haas and de Haas - van Alphen effects

Jan Bodnar
DOI: https://doi.org/10.48550/arXiv.1709.05845
2017-09-18
Abstract:Experimental values of SdH and dHvA periods and cyclotron effective masses found by Rosenman and Doi et al. have been compared with the theoretical predictions derived in this work for a tetragonal narrow gap semiconductor. By the least square fit method the values of band parameters were obtained. It has been established that Cd$_3$As$_2$ has inverted band structure resembling HgTe under tensile stress.
Materials Science
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