Effect of doping on the characteristics of infrared photodetectors based on van der Waals~heterostructures with multiple graphene layers

V. Ryzhii,M. Ryzhii,V. Leiman,V. Mitin,M. S. Shur,T. Otsuji

DOI: https://doi.org/10.1364/OE.25.005536

2017-05-13

Abstract:We study the operation of infrared photodetectors based on van der Waals heterostructures with the multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon absorption, the propagation of these electrons and the electrons injected from the emitter across the heterostructure and their collection by the collector contact. The space charge of the holes trapped in the GLs provides a relatively strong injection and large photoelectric gain. We calculate the GLIP responsivity and dark current detectivity as functions of the energy of incident infrared photons and the structural parameters. It is shown that both the periodic selective doping of the inter-GL barrier layers and the GL doping lead to a pronounced variation of the GLIP spectral characteristics, particularly near the interband absorption threshold, while the doping of GLs solely results in a substantial increase in the GLIP detectivity. The doping "engineering" opens wide opportunities for the optimization of GLIPs for operation in different parts of radiation spectrum from near infrared to terahertz.

Mesoscale and Nanoscale Physics,Applied Physics

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to study the characteristic changes of multi - layer graphene infrared photodetectors (GLIPs) based on van der Waals heterostructures under doping conditions. Specifically, the paper explores the following issues:

1. **The influence of doping on device performance**: By studying multi - layer graphene infrared photodetectors (GLIPs) with n - type emitter and collector contacts, the paper analyzes the influence of doping on the device responsivity and dark current detectivity. In particular, the paper explores how periodically selectively doped barrier layers and the graphene layers themselves can significantly change the spectral characteristics of GLIPs, especially near the inter - band absorption threshold.

2. **Optimizing device performance**: The paper points out that through appropriate doping engineering, the performance of GLIPs in different wavebands (from near - infrared to terahertz) can be optimized. For example, the selective doping of the barrier layer can increase the tunneling rate of hot electrons, thereby increasing the responsivity; while the doping of the graphene layer can reduce the dark current and improve the detectivity.

3. **Theoretical models and calculations**: In order to deeply understand the influence of doping on the performance of GLIPs, the authors developed a theoretical model and obtained the relationships between responsivity and detectivity with incident infrared photon energy and structural parameters through calculations. These calculation results provide a theoretical basis for optimizing device design.

4. **Practical application prospects**: The paper also discusses the potential advantages of GLIPs in practical applications, such as higher responsivity, better detectivity, and sensitivity to normal - incidence radiation, which make the application of GLIPs in certain specific wavebands (such as terahertz) possible.

In summary, the core problem of this paper is to optimize the performance of multi - layer graphene infrared photodetectors based on van der Waals heterostructures through doping engineering and explore their application potential in different wavebands.