Abstract:Efficient generation and manipulation of spin signals in a given material without invoking external magnetism remain one of the challenges in spintronics. The spin Hall effect (SHE) and Rashba-Edelstein effect (REE) are well-known mechanisms to electrically generate spin accumulation in materials with strong spin-orbit coupling (SOC), but the exact role of the strength and type of SOC, especially in crystals with low symmetry, has yet to be explained. In this study, we investigate REE in two different families of non-magnetic chiral materials, elemental semiconductors (Te and Se) and semimetallic disilicides (TaSi$_2$ and NbSi$_2$), using an approach based on density functional theory (DFT). By analyzing spin textures across the full Brillouin zones and comparing them with REE magnitudes calculated as a function of chemical potential, we link specific features in the electronic structure with the efficiency of the induced spin accumulation. Our findings show that magnitudes of REE can be increased by: (i) the presence of purely radial (Weyl-type) spin texture manifesting as the parallel spin-momentum locking, (ii) high spin polarization of bands along one specific crystallographic direction, (iii) low band velocities. By comparing materials possessing the same crystal structures, but different strengths of SOC, we conclude that larger SOC may indirectly contribute to the enhancement of REE. It yields greater spin-splitting of bands along specific crystallographic directions, which prevents canceling the contributions from the oppositely spin-polarized bands over wider energy regions and helps maintain larger REE magnitudes. We believe that these results will be useful for designing spintronics devices and may aid further computational studies searching for efficient REE in materials with different symmetries and SOC strengths.

Quantitative investigation of the inverse Rashba-Edelstein effect in Bi/Ag and Ag/Bi on YIG

Coherent Picture on the Pure Spin Transport Between Ag/Bi and Ferromagnets

Spin Pumping and Inverse Rashba-Edelstein Effect in NiFe/Ag/Bi and NiFe/Ag/Sb

Theory of inverse Rashba-Edelstein effect induced by spin pumping into a two-dimensional electron gas

Experimental Observation of Interfacial Rashba-Edelstein Magnetoresistance in Cr/YIG Heterostructures

Spin accumulation at nonmagnetic interface induced by direct Rashba Edelstein effect

Spin-to-Charge Conversion in Bi Films and Bi/Ag Bilayers.

Negligible spin–charge conversion in Bi films and Bi/Ag(Cu) bilayers

Interface-driven spin-torque ferromagnetic resonance by Rashba coupling at the interface between non-magnetic materials

Spin-to-Charge Conversion in Ag/Bi Bilayer Revisited

Unveiling the polarity of the spin-to-charge current conversion in $Bi_2Se_3$

The Giant Spin-to-Charge Conversion of the Layered Rashba Material BiTeI

Spin-to-Charge Conversion in Bilayer Revisited

Spin transport across antiferromagnets induced by the spin Seebeck effect

Giant interfacial spin-Hall angle from Rashba-Edelstein effect revealed by the spin-Hall Hanle processes

Bulk and Interface Effects Based on Rashba-Like States in Ti and Ru Nanoscale-Thick Films: Implications for Orbital-Charge Conversion in Spintronic Devices

Fingerprint of the Inverse Rashba-Edelstein Effect at Heavy-Metal/cu Interfaces

Collinear Rashba-Edelstein effect in non-magnetic chiral materials

Strong interface-induced spin-charge conversion in YIG/Cr heterostructures

Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/YIG heterostructures

Theory of the inverse Rashba-Edelstein effect induced by thermal spin injection