Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications

He Tian,Jesse Tice,Ruixiang Fei,Vy Tran,Xiaodong Yan,Li Yang,Han Wang

DOI: https://doi.org/10.1016/j.nantod.2016.10.003

2017-02-02

Abstract:In this review article, we discuss the synthesis, properties, and novel device applications of low-symmetry 2D materials, including black phosphorus and its arsenic alloys, compounds with black-phosphorus like structure such as the monochalcogenides of group IV elements like Ge and Sn, as well as the class of low-symmetry transition metal dichalcogenide (TMDC) materials such as rhenium disulfide (ReS2) and rhenium diselenide (ReSe2). Their unique physical properties resulting from the low symmetry in-plane crystal structure and the prospects of their application in nanoelectronics and nanophotonics, as well as piezoelectric devices and thermoelectrics are discussed.

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the unique properties and potential advantages of low - symmetry two - dimensional materials in electronic and photonic applications. Specifically, due to their lower crystal symmetry, these materials exhibit significant anisotropy in in - plane physical properties, which provides new possibilities for the development of new - type semiconductor devices.

### Main problem summary:

1. **Explore the unique properties of low - symmetry two - dimensional materials**:
- Traditional two - dimensional materials such as graphene, hexagonal boron nitride (hBN) and molybdenum disulfide (MoS₂) have relatively symmetric lattice structures, resulting in basically the same in - plane physical properties (such as electrical, optical and phonon properties).
- However, low - symmetry two - dimensional materials (such as black phosphorus, monochalcogenides and low - symmetry transition metal dichalcogenides) exhibit significantly different physical properties in different directions due to their asymmetric lattice structures.

2. **Develop new - concept devices based on low - symmetry two - dimensional materials**:
- The anisotropic properties of these materials make it possible to design electronic and photonic devices with new functions. For example, their anisotropic carrier mobility can be used to develop high - performance field - effect transistors (FET), radio - frequency (RF) transistors, etc.
- In addition, low - symmetry two - dimensional materials also have unique photoelectric properties and can be used to develop infrared photodetectors, polarization - sensitive photoelectric devices, etc.

3. **Study the synthesis and stability of low - symmetry two - dimensional materials**:
- The paper also explores how to synthesize high - quality low - symmetry two - dimensional materials by various methods (such as chemical vapor deposition, mechanical exfoliation, etc.) and improve their stability in the environment to ensure their reliability in practical applications.

### Formula examples:
- Lattice parameters of black phosphorus: \(a = 3.31 \, \text{Å}\), \(b = 10.54 \, \text{Å}\), \(c = 4.36 \, \text{Å}\).
- Band gap of black phosphorus varies with thickness: It increases from \(0.3 \, \text{eV}\) in the bulk to \(1.3 \, \text{eV}\) in the monolayer.
- Carrier mobility of black phosphorus: The mobility of electrons and holes can reach \(1000 \, \text{cm}^2/\text{V}\cdot\text{s}\) at room temperature, and the hole mobility can be as high as \(50,000 \, \text{cm}^2/\text{V}\cdot\text{s}\) at low temperature.

By solving these problems, the paper aims to promote the innovative applications of low - symmetry two - dimensional materials in the electronic and photonic fields and provide new ideas and technical means for future semiconductor device design.