Abstract:The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy to the role played by electron spin. In materials with broken inversion symmetry, such as an electrically gated bilayer graphene, the momentum-space Berry curvature $\Omega$ carries opposite sign in the K and K' valleys. A sign reversal of $\Omega$ along an internal boundary of the sheet gives rise to counter-propagating one-dimensional conducting modes encoded with opposite valley indices. These metallic states are topologically protected against backscattering in the absence of valley-mixing scattering, and thus can carry current ballistically. In bilayer graphene, the reversal of $\Omega$ can occur at the domain wall of AB and BA stacked domains, or at the line junction of two oppositely gated regions. The latter approach can provide a scalable platform to implement valleytronic operations such as valves and waveguides, but is technically challenging to realize. Here we fabricate a dual-split-gate structure in bilayer graphene and demonstrate transport evidence of the predicted metallic states. They possess a mean free path of up to a few hundred nanometers in the absence of a magnet field. The application of perpendicular magnetic field suppresses backscattering significantly and enables a 400-nanometer-long junction to exhibit conductance close to the ballistic limit of 4 $e^2/h$ at 8 Tesla. Our experiment paves the path to the realization of gate-controlled ballistic valley transport and the development of valleytronic applications in atomically thin materials.

Gate tunable current partition in graphene based topological zero lines

Tunable Current Partition at Zero-Line Intersection of Quantum Anomalous Hall Topologies

Physical Origin of Current Partition at a Topological Trifurcation

Gate controlled Majorana Zero Modes on 2D heterostructures

Gate-tunable topological valley transport in bilayer graphene

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Topological Zero-Line Modes in Folded Bilayer Graphene

Formation of Topological Domain Walls and Quantum Transport Properties of Zero-Line Modes in Commensurate Bilayer Graphene Systems

Spin Resolved Zero-Line Modes in Minimally Twisted Bilayer Graphene from Exchange Field and Gate Voltage

Detecting Topological Currents in Graphene Superlattices

Topological zero-line mode of bilayer graphene with Rashba spin-orbital coupling and staggered sublattice potentials

Interchannel Coupling Induced Gapless Modes in Multichannel Zero-Line Systems

Current Partition and Conducting Topological Networks in Twisted Graphene Bilayer

Gate-controlled topological conducting channels in bilayer graphene

Gate tunable enhancement of supercurrent in hybrid planar Josephson junctions

Engineering Topological States in Graphene Systems

Gate-tunable topological phases in superlattice modulated bilayer graphene

Quantized Field-Effect Tunneling Between Topological Edge or Interface States

Supercurrent mediated by helical edge modes in bilayer graphene

Gate Tunable Nonlinear Rectification Effects in Three-Terminal Graphene Nanojunctions

Large Landau level splitting with tunable one-dimensional graphene superlattice probed by magneto capacitance measurements